We report experimental results on a quantum point contact (QPC) device formed in a wide AlAs quantum well where the two-dimensional electrons occupy two in-plane valleys with elliptical Fermi contours. To probe the closely-spaced, one-dimensional electric subbands, we fabricated a point contact device defined by shallow etching and a top gate that covers the entire device. The conductance versus top gate bias trace shows a series of weak plateaus at integer multiples of 2 e2/h, indicating a broken valley degeneracy in the QPC and implying the potential use of QPC as a simple "valley filter" device. A model is presented to describe the quantized energy levels and the role of the in-plane valleys in the transport. We also observe a well-developed conductance plateau near 0.7×2 e2/h which may reflect the strong electron-electron interaction in the system.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Nov 6 2006|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics