Quantitative measurement of interstitial flux and surface super-saturation during oxidation of silicon

M. S. Carroll; J. C. Sturm

doi:10.1557/proc-610-b4.10

Quantitative measurement of interstitial flux and surface super-saturation during oxidation of silicon

M. S. Carroll
, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

During the oxidation of silicon, interstitials are generated at the oxidizing surface and diffuse into the silicon. Boron diffusion was used to map the local interstitial super-saturation, the ratio of interstitial concentration to the equilibrium concentration of interstitials I/I*, versus depth above buried Si_0.795Ge_0.2C_0.005 layers during oxidation. The average interstitial super-saturation at the silicon surface, extrapolated from the depth profiles, is measured as, ∼24 and ∼11.5 for 750°C and 850°C respectively. Using the measured interstitial concentration at the surface, the silicon interstitial injection into the silicon is calculated for oxidation at 750°C and 850°C. Finally, it is found that the surface boundary condition remains fixed over an interstitial injection rate ranging over 4 orders of magnitude.

Original language	English (US)
Pages (from-to)	B.4.10.1-B.4.10.6
Journal	Materials Research Society Symposium - Proceedings
Volume	610
DOIs	https://doi.org/10.1557/proc-610-b4.10
State	Published - 2000
Event	Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States Duration: Apr 24 2000 → Apr 27 2000

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-610-b4.10

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@article{4f241f89918c476b843ca53957dfaf0f,

title = "Quantitative measurement of interstitial flux and surface super-saturation during oxidation of silicon",

abstract = "During the oxidation of silicon, interstitials are generated at the oxidizing surface and diffuse into the silicon. Boron diffusion was used to map the local interstitial super-saturation, the ratio of interstitial concentration to the equilibrium concentration of interstitials I/I*, versus depth above buried Si0.795Ge0.2C0.005 layers during oxidation. The average interstitial super-saturation at the silicon surface, extrapolated from the depth profiles, is measured as, ∼24 and ∼11.5 for 750°C and 850°C respectively. Using the measured interstitial concentration at the surface, the silicon interstitial injection into the silicon is calculated for oxidation at 750°C and 850°C. Finally, it is found that the surface boundary condition remains fixed over an interstitial injection rate ranging over 4 orders of magnitude.",

author = "Carroll, \{M. S.\} and Sturm, \{J. C.\}",

note = "Funding Information: The authors would like to thank H. R{\"u}cker and C. S. Rafferty for helpful discussion and providing computer script for simulation of carbon diffusion. This work was supported by ONR/DARPA (N66 001-97-8904) and ARO/MURI (DAA 655-98-1-0270).; Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II ; Conference date: 24-04-2000 Through 27-04-2000",

year = "2000",

doi = "10.1557/proc-610-b4.10",

language = "English (US)",

volume = "610",

pages = "B.4.10.1--B.4.10.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Quantitative measurement of interstitial flux and surface super-saturation during oxidation of silicon

AU - Carroll, M. S.

AU - Sturm, J. C.

N1 - Funding Information: The authors would like to thank H. Rücker and C. S. Rafferty for helpful discussion and providing computer script for simulation of carbon diffusion. This work was supported by ONR/DARPA (N66 001-97-8904) and ARO/MURI (DAA 655-98-1-0270).

PY - 2000

Y1 - 2000

N2 - During the oxidation of silicon, interstitials are generated at the oxidizing surface and diffuse into the silicon. Boron diffusion was used to map the local interstitial super-saturation, the ratio of interstitial concentration to the equilibrium concentration of interstitials I/I*, versus depth above buried Si0.795Ge0.2C0.005 layers during oxidation. The average interstitial super-saturation at the silicon surface, extrapolated from the depth profiles, is measured as, ∼24 and ∼11.5 for 750°C and 850°C respectively. Using the measured interstitial concentration at the surface, the silicon interstitial injection into the silicon is calculated for oxidation at 750°C and 850°C. Finally, it is found that the surface boundary condition remains fixed over an interstitial injection rate ranging over 4 orders of magnitude.

AB - During the oxidation of silicon, interstitials are generated at the oxidizing surface and diffuse into the silicon. Boron diffusion was used to map the local interstitial super-saturation, the ratio of interstitial concentration to the equilibrium concentration of interstitials I/I*, versus depth above buried Si0.795Ge0.2C0.005 layers during oxidation. The average interstitial super-saturation at the silicon surface, extrapolated from the depth profiles, is measured as, ∼24 and ∼11.5 for 750°C and 850°C respectively. Using the measured interstitial concentration at the surface, the silicon interstitial injection into the silicon is calculated for oxidation at 750°C and 850°C. Finally, it is found that the surface boundary condition remains fixed over an interstitial injection rate ranging over 4 orders of magnitude.

UR - https://www.scopus.com/pages/publications/0034439010

UR - https://www.scopus.com/pages/publications/0034439010#tab=citedBy

U2 - 10.1557/proc-610-b4.10

DO - 10.1557/proc-610-b4.10

M3 - Conference article

AN - SCOPUS:0034439010

SN - 0272-9172

VL - 610

SP - B.4.10.1-B.4.10.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II

Y2 - 24 April 2000 through 27 April 2000

ER -

Quantitative measurement of interstitial flux and surface super-saturation during oxidation of silicon

Abstract

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