Quantitative measurement of interstitial flux and surface super-saturation during oxidation of silicon

M. S. Carroll, J. C. Sturm

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

During the oxidation of silicon, interstitials are generated at the oxidizing surface and diffuse into the silicon. Boron diffusion was used to map the local interstitial super-saturation, the ratio of interstitial concentration to the equilibrium concentration of interstitials I/I*, versus depth above buried Si0.795Ge0.2C0.005 layers during oxidation. The average interstitial super-saturation at the silicon surface, extrapolated from the depth profiles, is measured as, ∼24 and ∼11.5 for 750°C and 850°C respectively. Using the measured interstitial concentration at the surface, the silicon interstitial injection into the silicon is calculated for oxidation at 750°C and 850°C. Finally, it is found that the surface boundary condition remains fixed over an interstitial injection rate ranging over 4 orders of magnitude.

Original languageEnglish (US)
Pages (from-to)B.4.10.1-B.4.10.6
JournalMaterials Research Society Symposium - Proceedings
Volume610
DOIs
StatePublished - 2000
EventSi Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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