TY - JOUR
T1 - Quantitative measurement of interstitial flux and surface super-saturation during oxidation of silicon
AU - Carroll, M. S.
AU - Sturm, J. C.
N1 - Funding Information:
The authors would like to thank H. Rücker and C. S. Rafferty for helpful discussion and providing computer script for simulation of carbon diffusion. This work was supported by ONR/DARPA (N66 001-97-8904) and ARO/MURI (DAA 655-98-1-0270).
PY - 2000
Y1 - 2000
N2 - During the oxidation of silicon, interstitials are generated at the oxidizing surface and diffuse into the silicon. Boron diffusion was used to map the local interstitial super-saturation, the ratio of interstitial concentration to the equilibrium concentration of interstitials I/I*, versus depth above buried Si0.795Ge0.2C0.005 layers during oxidation. The average interstitial super-saturation at the silicon surface, extrapolated from the depth profiles, is measured as, ∼24 and ∼11.5 for 750°C and 850°C respectively. Using the measured interstitial concentration at the surface, the silicon interstitial injection into the silicon is calculated for oxidation at 750°C and 850°C. Finally, it is found that the surface boundary condition remains fixed over an interstitial injection rate ranging over 4 orders of magnitude.
AB - During the oxidation of silicon, interstitials are generated at the oxidizing surface and diffuse into the silicon. Boron diffusion was used to map the local interstitial super-saturation, the ratio of interstitial concentration to the equilibrium concentration of interstitials I/I*, versus depth above buried Si0.795Ge0.2C0.005 layers during oxidation. The average interstitial super-saturation at the silicon surface, extrapolated from the depth profiles, is measured as, ∼24 and ∼11.5 for 750°C and 850°C respectively. Using the measured interstitial concentration at the surface, the silicon interstitial injection into the silicon is calculated for oxidation at 750°C and 850°C. Finally, it is found that the surface boundary condition remains fixed over an interstitial injection rate ranging over 4 orders of magnitude.
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U2 - 10.1557/proc-610-b4.10
DO - 10.1557/proc-610-b4.10
M3 - Conference article
AN - SCOPUS:0034439010
SN - 0272-9172
VL - 610
SP - B.4.10.1-B.4.10.6
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II
Y2 - 24 April 2000 through 27 April 2000
ER -