Proximity-induced anisotropic magnetoresistance in magnetized topological insulators

Joseph Sklenar, Yingjie Zhang, Matthias Benjamin Jungfleisch, Youngseok Kim, Yiran Xiao, Gregory J. MacDougall, Matthew J. Gilbert, Axel Hoffmann, Peter Schiffer, Nadya Mason

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Topological insulators (TIs) host spin-momentum locked surface states that are inherently susceptible to magnetic proximity modulations, making them promising for nano-electronic, spintronic, and quantum computing applications. While much effort has been devoted to studying (quantum) anomalous Hall effects in magnetic magnetically doped TIs, the inherent magnetoresistance (MR) properties in magnetic proximity-coupled surface states remain largely unexplored. Here, we directly exfoliate Bi2Se3 TI flakes onto a magnetic insulator, yttrium iron garnet, and measure the MR at various temperatures. We experimentally observe an anisotropic magnetoresistance that is consistent with a magnetized surface state. Our results indicate that the TI has magnetic anisotropy out of the sample plane, which opens an energy gap between the surface states. By applying a magnetic field along any in-plane orientation, the magnetization of the TI rotates toward the plane and the gap closes. Consequently, we observe a large (∼6.5%) MR signal that is attributed to an interplay between coherent rotation of magnetization within a topological insulator and abrupt switching of magnetization in the underlying magnetic insulator.

Original languageEnglish (US)
Article number232402
JournalApplied Physics Letters
Volume118
Issue number23
DOIs
StatePublished - Jun 7 2021
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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