Properties of photoexcited electrons and holes in undoped GaAs/AlGaAs QWs studied by classical cyclotron resonance

M. Kozhevnikov, B. M. Ashkinadze, E. Cohen, A. Ron, L. N. Pfeiffer

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We study photoinduced microwave absorption (PMA) at 36 GHz by photogenerated carriers and, in particular, the classical cyclotron resonance (CR) of both electrons and holes in undoped GaAs/AlGaAs QWs. Analyzing the CR lineshape, electron and hole cyclotron masses and their mobilities are obtained. It is found that the electron cyclotron mass (mcr) increases with increasing microwave power and with lattice temperature. This is discussed in terms of a decreased electron localization in the spatially fluctuating QW potential.

Original languageEnglish (US)
Pages (from-to)67-70
Number of pages4
JournalSuperlattices and Microstructures
Volume23
Issue number1
DOIs
StatePublished - Jan 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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