Properties of photoexcited electrons and holes in undoped GaAs/AlGaAs QWs studied by classical cyclotron resonance

M. Kozhevnikov; B. M. Ashkinadze; E. Cohen; A. Ron; L. N. Pfeiffer

doi:10.1006/spmi.1996.0292

Properties of photoexcited electrons and holes in undoped GaAs/AlGaAs QWs studied by classical cyclotron resonance

M. Kozhevnikov, B. M. Ashkinadze, E. Cohen, A. Ron, L. N. Pfeiffer

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We study photoinduced microwave absorption (PMA) at 36 GHz by photogenerated carriers and, in particular, the classical cyclotron resonance (CR) of both electrons and holes in undoped GaAs/AlGaAs QWs. Analyzing the CR lineshape, electron and hole cyclotron masses and their mobilities are obtained. It is found that the electron cyclotron mass (m_cr) increases with increasing microwave power and with lattice temperature. This is discussed in terms of a decreased electron localization in the spatially fluctuating QW potential.

Original language	English (US)
Pages (from-to)	67-70
Number of pages	4
Journal	Superlattices and Microstructures
Volume	23
Issue number	1
DOIs	https://doi.org/10.1006/spmi.1996.0292
State	Published - Jan 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "We study photoinduced microwave absorption (PMA) at 36 GHz by photogenerated carriers and, in particular, the classical cyclotron resonance (CR) of both electrons and holes in undoped GaAs/AlGaAs QWs. Analyzing the CR lineshape, electron and hole cyclotron masses and their mobilities are obtained. It is found that the electron cyclotron mass (mcr) increases with increasing microwave power and with lattice temperature. This is discussed in terms of a decreased electron localization in the spatially fluctuating QW potential.",

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AU - Kozhevnikov, M.

AU - Ashkinadze, B. M.

AU - Cohen, E.

AU - Ron, A.

AU - Pfeiffer, L. N.

PY - 1998/1

Y1 - 1998/1

N2 - We study photoinduced microwave absorption (PMA) at 36 GHz by photogenerated carriers and, in particular, the classical cyclotron resonance (CR) of both electrons and holes in undoped GaAs/AlGaAs QWs. Analyzing the CR lineshape, electron and hole cyclotron masses and their mobilities are obtained. It is found that the electron cyclotron mass (mcr) increases with increasing microwave power and with lattice temperature. This is discussed in terms of a decreased electron localization in the spatially fluctuating QW potential.

AB - We study photoinduced microwave absorption (PMA) at 36 GHz by photogenerated carriers and, in particular, the classical cyclotron resonance (CR) of both electrons and holes in undoped GaAs/AlGaAs QWs. Analyzing the CR lineshape, electron and hole cyclotron masses and their mobilities are obtained. It is found that the electron cyclotron mass (mcr) increases with increasing microwave power and with lattice temperature. This is discussed in terms of a decreased electron localization in the spatially fluctuating QW potential.

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ER -

Properties of photoexcited electrons and holes in undoped GaAs/AlGaAs QWs studied by classical cyclotron resonance

Abstract

All Science Journal Classification (ASJC) codes

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