Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films

E. F. Schubert; M. Passlack; M. Hong; J. Mannerts; R. L. Opila; L. N. Pfeiffer; K. W. West; C. G. Bethea; G. J. Zydzik

doi:10.1063/1.111376

Properties of Al₂O₃ optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films

E. F. Schubert, M. Passlack, M. Hong, J. Mannerts, R. L. Opila, L. N. Pfeiffer, K. W. West, C. G. Bethea, G. J. Zydzik

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Auger analysis of oxidized AlAs epitaxial layers grown by molecular-beam epitaxy reveals that the composition of the films is stoichiometric Al ₂O₃. High optical quality of the films is demonstrated by optical reflection and transmission measurements. A reflectivity of 6% is measured for an antireflection coating on GaAs. Leakage currents in the nA range and resistivities ≳5×10¹¹ Ω cm are deduced from current-voltage measurements. Capacitance-voltage measurements on metal-oxide-semiconductor structures using the Al₂O₃ films obtained by oxidizing AlAs, reveal a significant reduction of the interface state density as compared to conventional, electron beam evaporated Al ₂O₃.

Original language	English (US)
Pages (from-to)	2976-2978
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	22
DOIs	https://doi.org/10.1063/1.111376
State	Published - 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.111376

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title = "Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films",

abstract = "Auger analysis of oxidized AlAs epitaxial layers grown by molecular-beam epitaxy reveals that the composition of the films is stoichiometric Al 2O3. High optical quality of the films is demonstrated by optical reflection and transmission measurements. A reflectivity of 6% is measured for an antireflection coating on GaAs. Leakage currents in the nA range and resistivities ≳5×1011 Ω cm are deduced from current-voltage measurements. Capacitance-voltage measurements on metal-oxide-semiconductor structures using the Al2O3 films obtained by oxidizing AlAs, reveal a significant reduction of the interface state density as compared to conventional, electron beam evaporated Al 2O3.",

author = "Schubert, {E. F.} and M. Passlack and M. Hong and J. Mannerts and Opila, {R. L.} and Pfeiffer, {L. N.} and West, {K. W.} and Bethea, {C. G.} and Zydzik, {G. J.}",

year = "1994",

doi = "10.1063/1.111376",

language = "English (US)",

volume = "64",

pages = "2976--2978",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

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TY - JOUR

T1 - Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films

AU - Schubert, E. F.

AU - Passlack, M.

AU - Hong, M.

AU - Mannerts, J.

AU - Opila, R. L.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Bethea, C. G.

AU - Zydzik, G. J.

PY - 1994

Y1 - 1994

N2 - Auger analysis of oxidized AlAs epitaxial layers grown by molecular-beam epitaxy reveals that the composition of the films is stoichiometric Al 2O3. High optical quality of the films is demonstrated by optical reflection and transmission measurements. A reflectivity of 6% is measured for an antireflection coating on GaAs. Leakage currents in the nA range and resistivities ≳5×1011 Ω cm are deduced from current-voltage measurements. Capacitance-voltage measurements on metal-oxide-semiconductor structures using the Al2O3 films obtained by oxidizing AlAs, reveal a significant reduction of the interface state density as compared to conventional, electron beam evaporated Al 2O3.

AB - Auger analysis of oxidized AlAs epitaxial layers grown by molecular-beam epitaxy reveals that the composition of the films is stoichiometric Al 2O3. High optical quality of the films is demonstrated by optical reflection and transmission measurements. A reflectivity of 6% is measured for an antireflection coating on GaAs. Leakage currents in the nA range and resistivities ≳5×1011 Ω cm are deduced from current-voltage measurements. Capacitance-voltage measurements on metal-oxide-semiconductor structures using the Al2O3 films obtained by oxidizing AlAs, reveal a significant reduction of the interface state density as compared to conventional, electron beam evaporated Al 2O3.

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Properties of Al₂O₃ optical coatings on GaAs produced by oxidation of epitaxial AlAs/GaAs films

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