Abstract
Thin (12 nm) organic films consisting of self-assembled multilayers of 11-mercaptoundecanoic acid were contacted by gold electrodes. The devices could be operated as a programmable memory by applying low-voltage pulses to increase the conductivity by 103 and then high-voltage pulses to reverse the increase; the conductivity of the stored state could be read nondestructively by applying a still-lower voltage pulse. Programmed states remained stable for longer than three months and devices were functional for more than 104 programming cycles. Current-voltage measurements of the devices revealed negative differential resistance with enormous current densities characteristic of metallic conduction (up to 107 A cm2). These results are promising for application in dense, high-speed memory arrays, where resistance-capacitance delays can be minimized by large current densities.
Original language | English (US) |
---|---|
Article number | 133502 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 13 |
DOIs | |
State | Published - Sep 26 2005 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)