Thin (12 nm) organic films consisting of self-assembled multilayers of 11-mercaptoundecanoic acid were contacted by gold electrodes. The devices could be operated as a programmable memory by applying low-voltage pulses to increase the conductivity by 103 and then high-voltage pulses to reverse the increase; the conductivity of the stored state could be read nondestructively by applying a still-lower voltage pulse. Programmed states remained stable for longer than three months and devices were functional for more than 104 programming cycles. Current-voltage measurements of the devices revealed negative differential resistance with enormous current densities characteristic of metallic conduction (up to 107 A cm2). These results are promising for application in dense, high-speed memory arrays, where resistance-capacitance delays can be minimized by large current densities.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Sep 26 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)