Probing occupied states of the molecular layer in Au-Alkanedithiol - GaAs diodes

Julia W.P. Hsu, David V. Lang, Kenneth W. West, Yueh Lin Loo, Mathew D. Halls, Krishnan Raghavachari

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

Internal photoemission (IPE) studies were performed on molecular diodes in which the alkanedithiol [HS(CH 2) nSH, n = 8, 10] molecular layer is sandwiched between Au and GaAs electrodes. The results are compared to those from Au-GaAs Schottky diodes. An exponential energy dependence in the IPE yield was observed for the molecular diodes, in contrast to the quadratic energy dependence characteristic of metal -semiconductor Schottky diodes, indicating that Au is not the source of electrons in the IPE process in the molecular diodes. From the GaAs dopant density dependence, we also can rule out GaAs being the source of these electrons. Compared with the results of cluster electronic structure calculations, we suggest that IPE is probing the occupied levels of GaAs-molecular interfacial states.

Original languageEnglish (US)
Pages (from-to)5719-5723
Number of pages5
JournalJournal of Physical Chemistry B
Volume109
Issue number12
DOIs
StatePublished - Mar 31 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry

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