Probing occupied states of the molecular layer in Au-Alkanedithiol - GaAs diodes

Julia W.P. Hsu; David V. Lang; Kenneth W. West; Yueh Lin Loo; Mathew D. Halls; Krishnan Raghavachari

doi:10.1021/jp044246s

Probing occupied states of the molecular layer in Au-Alkanedithiol - GaAs diodes

Julia W.P. Hsu, David V. Lang, Kenneth W. West, Yueh Lin Loo, Mathew D. Halls, Krishnan Raghavachari

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24 Scopus citations

Abstract

Internal photoemission (IPE) studies were performed on molecular diodes in which the alkanedithiol [HS(CH ₂) _nSH, n = 8, 10] molecular layer is sandwiched between Au and GaAs electrodes. The results are compared to those from Au-GaAs Schottky diodes. An exponential energy dependence in the IPE yield was observed for the molecular diodes, in contrast to the quadratic energy dependence characteristic of metal -semiconductor Schottky diodes, indicating that Au is not the source of electrons in the IPE process in the molecular diodes. From the GaAs dopant density dependence, we also can rule out GaAs being the source of these electrons. Compared with the results of cluster electronic structure calculations, we suggest that IPE is probing the occupied levels of GaAs-molecular interfacial states.

Original language	English (US)
Pages (from-to)	5719-5723
Number of pages	5
Journal	Journal of Physical Chemistry B
Volume	109
Issue number	12
DOIs	https://doi.org/10.1021/jp044246s
State	Published - Mar 31 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Materials Chemistry
Surfaces, Coatings and Films
Physical and Theoretical Chemistry

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title = "Probing occupied states of the molecular layer in Au-Alkanedithiol - GaAs diodes",

abstract = "Internal photoemission (IPE) studies were performed on molecular diodes in which the alkanedithiol [HS(CH 2) nSH, n = 8, 10] molecular layer is sandwiched between Au and GaAs electrodes. The results are compared to those from Au-GaAs Schottky diodes. An exponential energy dependence in the IPE yield was observed for the molecular diodes, in contrast to the quadratic energy dependence characteristic of metal -semiconductor Schottky diodes, indicating that Au is not the source of electrons in the IPE process in the molecular diodes. From the GaAs dopant density dependence, we also can rule out GaAs being the source of these electrons. Compared with the results of cluster electronic structure calculations, we suggest that IPE is probing the occupied levels of GaAs-molecular interfacial states.",

author = "Hsu, {Julia W.P.} and Lang, {David V.} and West, {Kenneth W.} and Loo, {Yueh Lin} and Halls, {Mathew D.} and Krishnan Raghavachari",

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T1 - Probing occupied states of the molecular layer in Au-Alkanedithiol - GaAs diodes

AU - Hsu, Julia W.P.

AU - Lang, David V.

AU - West, Kenneth W.

AU - Loo, Yueh Lin

AU - Halls, Mathew D.

AU - Raghavachari, Krishnan

PY - 2005/3/31

Y1 - 2005/3/31

N2 - Internal photoemission (IPE) studies were performed on molecular diodes in which the alkanedithiol [HS(CH 2) nSH, n = 8, 10] molecular layer is sandwiched between Au and GaAs electrodes. The results are compared to those from Au-GaAs Schottky diodes. An exponential energy dependence in the IPE yield was observed for the molecular diodes, in contrast to the quadratic energy dependence characteristic of metal -semiconductor Schottky diodes, indicating that Au is not the source of electrons in the IPE process in the molecular diodes. From the GaAs dopant density dependence, we also can rule out GaAs being the source of these electrons. Compared with the results of cluster electronic structure calculations, we suggest that IPE is probing the occupied levels of GaAs-molecular interfacial states.

AB - Internal photoemission (IPE) studies were performed on molecular diodes in which the alkanedithiol [HS(CH 2) nSH, n = 8, 10] molecular layer is sandwiched between Au and GaAs electrodes. The results are compared to those from Au-GaAs Schottky diodes. An exponential energy dependence in the IPE yield was observed for the molecular diodes, in contrast to the quadratic energy dependence characteristic of metal -semiconductor Schottky diodes, indicating that Au is not the source of electrons in the IPE process in the molecular diodes. From the GaAs dopant density dependence, we also can rule out GaAs being the source of these electrons. Compared with the results of cluster electronic structure calculations, we suggest that IPE is probing the occupied levels of GaAs-molecular interfacial states.

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Probing occupied states of the molecular layer in Au-Alkanedithiol - GaAs diodes

Abstract

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