Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy

Z. Y. Zhao; C. Yi; A. D. Stiff-Roberts; A. J. Hoffman; D. Wasserman; Claire F. Gmachl

doi:10.1016/j.infrared.2007.04.002

Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy

Z. Y. Zhao
, C. Yi
, A. D. Stiff-Roberts
, A. J. Hoffman
, D. Wasserman
, Claire F. Gmachl

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.

Original language	English (US)
Pages (from-to)	131-135
Number of pages	5
Journal	Infrared Physics and Technology
Volume	51
Issue number	2
DOIs	https://doi.org/10.1016/j.infrared.2007.04.002
State	Published - Oct 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

Deep-level defect center
Doping
Fourier transform infrared spectroscopy
Polarization-dependent absorbance spectrum
Quantum-dot infrared photodetector

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10.1016/j.infrared.2007.04.002

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@article{ddc372cc956845a1874364d8dcf88ad7,

title = "Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy",

abstract = "In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.",

keywords = "Deep-level defect center, Doping, Fourier transform infrared spectroscopy, Polarization-dependent absorbance spectrum, Quantum-dot infrared photodetector",

author = "Zhao, \{Z. Y.\} and C. Yi and Stiff-Roberts, \{A. D.\} and Hoffman, \{A. J.\} and D. Wasserman and Gmachl, \{Claire F.\}",

note = "Funding Information: A.D.S.R. acknowledges support from the National Science Foundation under Grant No. 0547273 and the Air Force Office of Scientific Research under Grant No. FA9550-06-1-0482; A.D.S.R. and Z.Y.Z. acknowledge the Duke University Graduate School and Nanoscience Program (GPNANO-Fellowship); A.J.H. acknowledges support from PRISM, Princeton; and D.W. acknowledges support from the Princeton Council on Science and Technology.",

year = "2007",

month = oct,

doi = "10.1016/j.infrared.2007.04.002",

language = "English (US)",

volume = "51",

pages = "131--135",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy

AU - Zhao, Z. Y.

AU - Yi, C.

AU - Stiff-Roberts, A. D.

AU - Hoffman, A. J.

AU - Wasserman, D.

AU - Gmachl, Claire F.

N1 - Funding Information: A.D.S.R. acknowledges support from the National Science Foundation under Grant No. 0547273 and the Air Force Office of Scientific Research under Grant No. FA9550-06-1-0482; A.D.S.R. and Z.Y.Z. acknowledge the Duke University Graduate School and Nanoscience Program (GPNANO-Fellowship); A.J.H. acknowledges support from PRISM, Princeton; and D.W. acknowledges support from the Princeton Council on Science and Technology.

PY - 2007/10

Y1 - 2007/10

N2 - In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.

AB - In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.

KW - Deep-level defect center

KW - Doping

KW - Fourier transform infrared spectroscopy

KW - Polarization-dependent absorbance spectrum

KW - Quantum-dot infrared photodetector

UR - https://www.scopus.com/pages/publications/34748879456

UR - https://www.scopus.com/pages/publications/34748879456#tab=citedBy

U2 - 10.1016/j.infrared.2007.04.002

DO - 10.1016/j.infrared.2007.04.002

M3 - Article

AN - SCOPUS:34748879456

SN - 1350-4495

VL - 51

SP - 131

EP - 135

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

IS - 2

ER -

Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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