TY - JOUR
T1 - Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy
AU - Zhao, Z. Y.
AU - Yi, C.
AU - Stiff-Roberts, A. D.
AU - Hoffman, A. J.
AU - Wasserman, D.
AU - Gmachl, Claire F.
N1 - Funding Information:
A.D.S.R. acknowledges support from the National Science Foundation under Grant No. 0547273 and the Air Force Office of Scientific Research under Grant No. FA9550-06-1-0482; A.D.S.R. and Z.Y.Z. acknowledge the Duke University Graduate School and Nanoscience Program (GPNANO-Fellowship); A.J.H. acknowledges support from PRISM, Princeton; and D.W. acknowledges support from the Princeton Council on Science and Technology.
PY - 2007/10
Y1 - 2007/10
N2 - In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.
AB - In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.
KW - Deep-level defect center
KW - Doping
KW - Fourier transform infrared spectroscopy
KW - Polarization-dependent absorbance spectrum
KW - Quantum-dot infrared photodetector
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U2 - 10.1016/j.infrared.2007.04.002
DO - 10.1016/j.infrared.2007.04.002
M3 - Article
AN - SCOPUS:34748879456
SN - 1350-4495
VL - 51
SP - 131
EP - 135
JO - Infrared Physics and Technology
JF - Infrared Physics and Technology
IS - 2
ER -