Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy

Z. Y. Zhao, C. Yi, A. D. Stiff-Roberts, A. J. Hoffman, D. Wasserman, Claire F. Gmachl

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.

Original languageEnglish (US)
Pages (from-to)131-135
Number of pages5
JournalInfrared Physics and Technology
Volume51
Issue number2
DOIs
StatePublished - Oct 1 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Keywords

  • Deep-level defect center
  • Doping
  • Fourier transform infrared spectroscopy
  • Polarization-dependent absorbance spectrum
  • Quantum-dot infrared photodetector

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