Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

R. M. Jock; S. Shankar; A. M. Tyryshkin; Jianhua He; K. Eng; K. D. Childs; L. A. Tracy; M. P. Lilly; M. S. Carroll; S. A. Lyon

doi:10.1063/1.3675862

Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

R. M. Jock
, S. Shankar
, A. M. Tyryshkin
, Jianhua He
, K. Eng
, K. D. Childs
, L. A. Tracy
, M. P. Lilly
, M. S. Carroll
, S. A. Lyon

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO ₂ interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO ₂ interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO ₂ interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO ₂ interface quality at low electron densities, where conventional mobility measurements are not possible.

Original language	English (US)
Article number	023503
Journal	Applied Physics Letters
Volume	100
Issue number	2
DOIs	https://doi.org/10.1063/1.3675862
State	Published - Jan 9 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3675862

Cite this

@article{65c8367f245c40d5bdaaacfcbb518b33,

title = "Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance",

abstract = "We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO 2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO 2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO 2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO 2 interface quality at low electron densities, where conventional mobility measurements are not possible.",

author = "Jock, \{R. M.\} and S. Shankar and Tyryshkin, \{A. M.\} and Jianhua He and K. Eng and Childs, \{K. D.\} and Tracy, \{L. A.\} and Lilly, \{M. P.\} and Carroll, \{M. S.\} and Lyon, \{S. A.\}",

note = "Funding Information: Work at Princeton was supported by NSA/LPS and the ARO (W911NF-04-1-0389) and by NSF through the Princeton MRSEC (DMR-0819860). Part of this work was performed at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Co., for the United States Department of Energy under Contract No. DE-AC04-94AL85000.",

year = "2012",

month = jan,

day = "9",

doi = "10.1063/1.3675862",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

AU - Jock, R. M.

AU - Shankar, S.

AU - Tyryshkin, A. M.

AU - He, Jianhua

AU - Eng, K.

AU - Childs, K. D.

AU - Tracy, L. A.

AU - Lilly, M. P.

AU - Carroll, M. S.

AU - Lyon, S. A.

N1 - Funding Information: Work at Princeton was supported by NSA/LPS and the ARO (W911NF-04-1-0389) and by NSF through the Princeton MRSEC (DMR-0819860). Part of this work was performed at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Co., for the United States Department of Energy under Contract No. DE-AC04-94AL85000.

PY - 2012/1/9

Y1 - 2012/1/9

N2 - We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO 2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO 2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO 2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO 2 interface quality at low electron densities, where conventional mobility measurements are not possible.

AB - We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO 2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO 2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO 2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO 2 interface quality at low electron densities, where conventional mobility measurements are not possible.

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DO - 10.1063/1.3675862

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VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023503

ER -

Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

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