Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

R. M. Jock, S. Shankar, A. M. Tyryshkin, Jianhua He, K. Eng, K. D. Childs, L. A. Tracy, M. P. Lilly, M. S. Carroll, S. A. Lyon

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Abstract

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO 2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO 2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO 2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO 2 interface quality at low electron densities, where conventional mobility measurements are not possible.

Original languageEnglish (US)
Article number023503
JournalApplied Physics Letters
Volume100
Issue number2
DOIs
StatePublished - Jan 9 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Jock, R. M., Shankar, S., Tyryshkin, A. M., He, J., Eng, K., Childs, K. D., Tracy, L. A., Lilly, M. P., Carroll, M. S., & Lyon, S. A. (2012). Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance. Applied Physics Letters, 100(2), [023503]. https://doi.org/10.1063/1.3675862