Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

R. M. Jock; S. Shankar; A. M. Tyryshkin; Jianhua He; K. Eng; K. D. Childs; L. A. Tracy; M. P. Lilly; M. S. Carroll; S. A. Lyon

doi:10.1063/1.3675862

Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

R. M. Jock, S. Shankar, A. M. Tyryshkin, Jianhua He, K. Eng, K. D. Childs, L. A. Tracy, M. P. Lilly, M. S. Carroll, S. A. Lyon

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO ₂ interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO ₂ interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO ₂ interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO ₂ interface quality at low electron densities, where conventional mobility measurements are not possible.

Original language	English (US)
Article number	023503
Journal	Applied Physics Letters
Volume	100
Issue number	2
DOIs	https://doi.org/10.1063/1.3675862
State	Published - Jan 9 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3675862

Cite this

@article{65c8367f245c40d5bdaaacfcbb518b33,

title = "Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance",

abstract = "We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO 2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO 2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO 2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO 2 interface quality at low electron densities, where conventional mobility measurements are not possible.",

author = "Jock, {R. M.} and S. Shankar and Tyryshkin, {A. M.} and Jianhua He and K. Eng and Childs, {K. D.} and Tracy, {L. A.} and Lilly, {M. P.} and Carroll, {M. S.} and Lyon, {S. A.}",

note = "Funding Information: Work at Princeton was supported by NSA/LPS and the ARO (W911NF-04-1-0389) and by NSF through the Princeton MRSEC (DMR-0819860). Part of this work was performed at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Co., for the United States Department of Energy under Contract No. DE-AC04-94AL85000.",

year = "2012",

month = jan,

day = "9",

doi = "10.1063/1.3675862",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

AU - Jock, R. M.

AU - Shankar, S.

AU - Tyryshkin, A. M.

AU - He, Jianhua

AU - Eng, K.

AU - Childs, K. D.

AU - Tracy, L. A.

AU - Lilly, M. P.

AU - Carroll, M. S.

AU - Lyon, S. A.

N1 - Funding Information: Work at Princeton was supported by NSA/LPS and the ARO (W911NF-04-1-0389) and by NSF through the Princeton MRSEC (DMR-0819860). Part of this work was performed at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Co., for the United States Department of Energy under Contract No. DE-AC04-94AL85000.

PY - 2012/1/9

Y1 - 2012/1/9

N2 - We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO 2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO 2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO 2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO 2 interface quality at low electron densities, where conventional mobility measurements are not possible.

AB - We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO 2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO 2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO 2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO 2 interface quality at low electron densities, where conventional mobility measurements are not possible.

UR - http://www.scopus.com/inward/record.url?scp=84855932261&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855932261&partnerID=8YFLogxK

U2 - 10.1063/1.3675862

DO - 10.1063/1.3675862

M3 - Article

AN - SCOPUS:84855932261

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023503

ER -

Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this