We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO 2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO 2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO 2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO 2 interface quality at low electron densities, where conventional mobility measurements are not possible.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Jan 9 2012|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)