TY - JOUR
T1 - Printed Memtransistor Utilizing a Hybrid Perovskite/Organic Heterojunction Channel
AU - Ma, Chun
AU - Chen, Hu
AU - Yengel, Emre
AU - Faber, Hendrik
AU - Khan, Jafar I.
AU - Tang, Ming Chun
AU - Li, Ruipeng
AU - Loganathan, Kalaivanan
AU - Lin, Yuanbao
AU - Zhang, Weimin
AU - Laquai, Frédéric
AU - McCulloch, Iain
AU - Anthopoulos, Thomas D.
N1 - Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/11/3
Y1 - 2021/11/3
N2 - Neuromorphic computing has the potential to address the inherent limitations of conventional integrated circuit technology, ranging from perception, pattern recognition, to memory and decision-making (Acc. Chem. Res. 2019, 52 (4), 964-974) (Nature 2004, 431 (7010), 796-803) (Nat. Nanotechnol. 2013, 8 (1), 13-24). Despite their low power consumption (Nano Lett. 2016, 16 (11), 6724-6732), traditional two-terminal memristors can perform only a single function while lacking heterosynaptic plasticity (Nanotechnology 2013, 24 (38), 382001). Inspired by the unconditioned reflex, multiterminal memristive transistors (memtransistor) were developed to realize complex functions, such as multiterminal modulation and heterosynaptic plasticity (Nature 2018, 554, (7693), 500-504). Here we combine a hybrid metal halide perovskite with an organic conjugated polymer to form heterojunction transistors that are responsive to both electrical and optical stimuli. We show that the synergistic effects of photoinduced ion migration in the perovskite and electronic transport in the polymer layers can be exploited to realize memristive functions. The device combines reversible, nonvolatile conductance modulation with large switching current ratios, high endurance, and long retention times. Using in situ scanning Kelvin probe microscopy and variable-temperature charge transport measurement, we correlate the collective effects of bias-induced and photoinduced ion migration with the heterosynaptic behavior observed in this hybrid memtransistor. The hybrid heterojunction channel concept is expected to be applicable to other material combinations making it a promising platform for deployment in innovative neuromorphic devices of the future.
AB - Neuromorphic computing has the potential to address the inherent limitations of conventional integrated circuit technology, ranging from perception, pattern recognition, to memory and decision-making (Acc. Chem. Res. 2019, 52 (4), 964-974) (Nature 2004, 431 (7010), 796-803) (Nat. Nanotechnol. 2013, 8 (1), 13-24). Despite their low power consumption (Nano Lett. 2016, 16 (11), 6724-6732), traditional two-terminal memristors can perform only a single function while lacking heterosynaptic plasticity (Nanotechnology 2013, 24 (38), 382001). Inspired by the unconditioned reflex, multiterminal memristive transistors (memtransistor) were developed to realize complex functions, such as multiterminal modulation and heterosynaptic plasticity (Nature 2018, 554, (7693), 500-504). Here we combine a hybrid metal halide perovskite with an organic conjugated polymer to form heterojunction transistors that are responsive to both electrical and optical stimuli. We show that the synergistic effects of photoinduced ion migration in the perovskite and electronic transport in the polymer layers can be exploited to realize memristive functions. The device combines reversible, nonvolatile conductance modulation with large switching current ratios, high endurance, and long retention times. Using in situ scanning Kelvin probe microscopy and variable-temperature charge transport measurement, we correlate the collective effects of bias-induced and photoinduced ion migration with the heterosynaptic behavior observed in this hybrid memtransistor. The hybrid heterojunction channel concept is expected to be applicable to other material combinations making it a promising platform for deployment in innovative neuromorphic devices of the future.
KW - conjugated polymer
KW - heterojunction
KW - hybrid perovskites
KW - memtransistor
KW - neuromorphic device
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U2 - 10.1021/acsami.1c08583
DO - 10.1021/acsami.1c08583
M3 - Article
C2 - 34696578
AN - SCOPUS:85118937849
SN - 1944-8244
VL - 13
SP - 51592
EP - 51601
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 43
ER -