Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature

Shan Zhang, Q. D. Gibson, Wei Yi, Jing Guo, Zhe Wang, Yazhou Zhou, Honghong Wang, Shu Cai, Ke Yang, Aiguo Li, Qi Wu, Robert J. Cava, Liling Sun, Zhongxian Zhao

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Abstract

We report high-pressure studies of the structural stability of Ru2Sn3, a new type of three-dimensional topological insulator (3D-TI) with unique quasi-one-dimensional Dirac electron states throughout the surface Brillouin zone of its one-atmosphere low-temperature orthorhombic form. Our in-situ high-pressure synchrotron x-ray diffraction and electrical resistance measurements reveal that upon increasing pressure the tetragonal-to-orthorhombic phase shifts to higher temperature. We find that the stability of the orthorhombic phase that hosts the non-trivial topological ground state can be pushed up to room temperature by an applied pressure of ∼ 20 GPa. This is in contrast with the commonly known 3D-TIs whose ground state is usually destroyed under pressure. Our results indicate that pressure provides a possible pathway for realizing a room temperature topological insulating state in Ru2Sn3.

Original languageEnglish (US)
Article number46001
JournalEPL
Volume117
Issue number4
DOIs
StatePublished - Feb 2017

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Zhang, S., Gibson, Q. D., Yi, W., Guo, J., Wang, Z., Zhou, Y., Wang, H., Cai, S., Yang, K., Li, A., Wu, Q., Cava, R. J., Sun, L., & Zhao, Z. (2017). Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature. EPL, 117(4), [46001]. https://doi.org/10.1209/0295-5075/117/46001