Abstract
We investigate the broadening of the 2s energy level of a Li atom outside a Si(0 0 1) surface using a first principles approach. The covalent nature of the Si surface produces large variations in Li energy level widths as a function of lateral position across the surface. The widths above symmetric Si dimers are predicted to be much larger than above buckled Si dimers, suggesting that charge transfer will occur primarily above symmetric dimers. We discuss the ramifications of our results on the controversy surrounding the relative abundance of the buckled vs. symmetric dimers on the Si surface.
Original language | English (US) |
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Pages (from-to) | L29-L33 |
Journal | Surface Science |
Volume | 601 |
Issue number | 5 |
DOIs | |
State | Published - Mar 1 2007 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Keywords
- Atom-solid interactions, scattering, diffraction
- Density functional calculations
- Ion-solid interactions, scattering, channeling
- Low index single crystal surfaces
- Silicon