Pragmatic design of gated-diode finFET DRAMs

Ajay N. Bhoj, Niraj K. Jha

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Scaling bulk CMOS SRAM technology for onchip caches beyond the 22nm node is questionable, on account of high leakage power consumption, performance degradation, and instability due to process variations. Recently, two/three transistor one gated-diode (2T/3T1D) DRAMs were proposed as alternatives to address the SRAM variability problem, with an emphasis on high-activity embedded cache applications. They are highly competitive with an SRAM in terms of performance, while having a smaller power and area footprint at lower technology nodes. The current evolutionary trend in transistor structures is toward an era of multi-gate devices, which makes it necessary to identify design issues and advantages of gated-diode DRAMs implemented in a multi-gate technology. In this work, we address gated-diode DRAM design in FinFET technology using mixed-mode 2D-device simulations. We revisit the model of internal voltage gain in bulk gated-diodes and extend it to provide quantitative insight into designing Fin gated-diodes, i.e., gated-diodes in FinFET technology. To this effect, we propose FinFET variants of the bulk gated-diode configuration and identify parameters that are critical to enhancing the retention time and read current in 2T/3T1D FinFET DRAMs. Additionally, we show the superiority of 2T1D FinFET DRAM over 6T FinFET SRAM having pass-gate feedback (6T PGFB) and 2T1D bulk DRAM under the effect of variations using a quasi-Monte Carlo method implemented in FinE, an environment we have developed for double-gate circuit design that integrates Sentaurus TCAD from Synopsys with the Spice3UFDG double-gate compact model from University of Florida under a single framework. Finally, we present a new tunable threshold gated-diode FinFET amplifier which uses an n-type gated-diode for voltage-boosting, along with a p-type gated-diode for zero-suppression.

Original languageEnglish (US)
Title of host publication2009 IEEE International Conference on Computer Design, ICCD 2009
Pages390-397
Number of pages8
DOIs
StatePublished - 2009
Event2009 IEEE International Conference on Computer Design, ICCD 2009 - Lake Tahoe, CA, United States
Duration: Oct 4 2009Oct 7 2009

Publication series

NameProceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors
ISSN (Print)1063-6404

Other

Other2009 IEEE International Conference on Computer Design, ICCD 2009
CountryUnited States
CityLake Tahoe, CA
Period10/4/0910/7/09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Bhoj, A. N., & Jha, N. K. (2009). Pragmatic design of gated-diode finFET DRAMs. In 2009 IEEE International Conference on Computer Design, ICCD 2009 (pp. 390-397). [5413127] (Proceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors). https://doi.org/10.1109/ICCD.2009.5413127