Potential distribution in functionalized graphene devices probed by Kelvin probe force microscopy

Liang Yan, Christian Punckt, Ilhan A. Aksay, Wolfgang Mertin, Gerd Bacher

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Kelvin probe force microscopy was used to study the impact of contacts and topography on the local potential distribution on contacted, individual functionalized graphene sheets (FGS) deposited on a SiO 2/Si substrate. Negligible contact resistance is found at the graphene/Ti interface and a graphene resistance of 2.3 kΩ is extracted for a single sheet with sub-μm size. Pronounced steps in the topography, which we attribute to a variation of the spacing between graphene and substrate, result in a significant change of the local resistivity.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages819-820
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: Jul 25 2010Jul 30 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period7/25/107/30/10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Keywords

  • Functionalized graphene sheets
  • Kelvin probe force microscopy
  • electrical potential
  • local resistance

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  • Cite this

    Yan, L., Punckt, C., Aksay, I. A., Mertin, W., & Bacher, G. (2011). Potential distribution in functionalized graphene devices probed by Kelvin probe force microscopy. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 819-820). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666628