Post-Growth Annealing Treatments of Epitaxial CaF2 on Si(100

T. P. Smith; Loren Pfeiffer; D. C. Joy; J. M. Gibson; W. M. Augustyniak; K. W. West

doi:10.1149/1.2108529

Post-Growth Annealing Treatments of Epitaxial CaF₂ on Si(100

T. P. Smith, Loren Pfeiffer, D. C. Joy, J. M. Gibson, W. M. Augustyniak, K. W. West

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	224-227
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	133
Issue number	1
DOIs	https://doi.org/10.1149/1.2108529
State	Published - Jan 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.2108529

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title = "Post-Growth Annealing Treatments of Epitaxial CaF2 on Si(100",

author = "Smith, {T. P.} and Loren Pfeiffer and Joy, {D. C.} and Gibson, {J. M.} and Augustyniak, {W. M.} and West, {K. W.}",

year = "1986",

month = jan,

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language = "English (US)",

volume = "133",

pages = "224--227",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

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AU - Smith, T. P.

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AU - Augustyniak, W. M.

AU - West, K. W.

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DO - 10.1149/1.2108529

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AN - SCOPUS:0022439576

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 1

ER -

Post-Growth Annealing Treatments of Epitaxial CaF₂ on Si(100

All Science Journal Classification (ASJC) codes

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