POST-GROWTH ANNEALING TREATMENTS OF EPITAXIAL CaF//2 ON Si(100).

Julia M. Phillips; Loren Pfeiffer; D. C. Joy; T. P. Smith; J. M. Gibson; W. M. Augustyniak; K. W. West

POST-GROWTH ANNEALING TREATMENTS OF EPITAXIAL CaF//2 ON Si(100).

Julia M. Phillips, Loren Pfeiffer, D. C. Joy, T. P. Smith, J. M. Gibson, W. M. Augustyniak, K. W. West

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report here the results of scanning electron microscopy and transmission electron diffraction studies which characterize the improvement in the epitaxial quality of CaF//2 films on Si(100) resulting from two types of post-growth anneal. We compare rapid thermal anneals (RTA's) ex situ with in situ anneals. Both treatments improve the crystalline quality of the CaF//2. RTA treatments also improve the surface morphology and electrical breakdown characteristics. Cracks arising as the result of RTA are characterized and are accounted for by the differential thermal contraction of CaF//2 and Si.

Original language	English (US)
Pages (from-to)	296-303
Number of pages	8
Journal	Proceedings - The Electrochemical Society
Volume	85-7
State	Published - 1985
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "POST-GROWTH ANNEALING TREATMENTS OF EPITAXIAL CaF//2 ON Si(100).",

abstract = "We report here the results of scanning electron microscopy and transmission electron diffraction studies which characterize the improvement in the epitaxial quality of CaF//2 films on Si(100) resulting from two types of post-growth anneal. We compare rapid thermal anneals (RTA's) ex situ with in situ anneals. Both treatments improve the crystalline quality of the CaF//2. RTA treatments also improve the surface morphology and electrical breakdown characteristics. Cracks arising as the result of RTA are characterized and are accounted for by the differential thermal contraction of CaF//2 and Si.",

author = "Phillips, {Julia M.} and Loren Pfeiffer and Joy, {D. C.} and Smith, {T. P.} and Gibson, {J. M.} and Augustyniak, {W. M.} and West, {K. W.}",

year = "1985",

language = "English (US)",

volume = "85-7",

pages = "296--303",

journal = "Proceedings - The Electrochemical Society",

issn = "0161-6374",

}

TY - JOUR

T1 - POST-GROWTH ANNEALING TREATMENTS OF EPITAXIAL CaF//2 ON Si(100).

AU - Phillips, Julia M.

AU - Pfeiffer, Loren

AU - Joy, D. C.

AU - Smith, T. P.

AU - Gibson, J. M.

AU - Augustyniak, W. M.

AU - West, K. W.

PY - 1985

Y1 - 1985

N2 - We report here the results of scanning electron microscopy and transmission electron diffraction studies which characterize the improvement in the epitaxial quality of CaF//2 films on Si(100) resulting from two types of post-growth anneal. We compare rapid thermal anneals (RTA's) ex situ with in situ anneals. Both treatments improve the crystalline quality of the CaF//2. RTA treatments also improve the surface morphology and electrical breakdown characteristics. Cracks arising as the result of RTA are characterized and are accounted for by the differential thermal contraction of CaF//2 and Si.

AB - We report here the results of scanning electron microscopy and transmission electron diffraction studies which characterize the improvement in the epitaxial quality of CaF//2 films on Si(100) resulting from two types of post-growth anneal. We compare rapid thermal anneals (RTA's) ex situ with in situ anneals. Both treatments improve the crystalline quality of the CaF//2. RTA treatments also improve the surface morphology and electrical breakdown characteristics. Cracks arising as the result of RTA are characterized and are accounted for by the differential thermal contraction of CaF//2 and Si.

UR - http://www.scopus.com/inward/record.url?scp=0022233540&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022233540&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0022233540

SN - 0161-6374

VL - 85-7

SP - 296

EP - 303

JO - Proceedings - The Electrochemical Society

JF - Proceedings - The Electrochemical Society

ER -

POST-GROWTH ANNEALING TREATMENTS OF EPITAXIAL CaF//2 ON Si(100).

Abstract

All Science Journal Classification (ASJC) codes

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