Abstract
We present an ab initio study of positron trapping at a VAs- vacancy in GaAs which self-consistently includes lattice relaxations induced by the positron. In the presence of a positron, the volume of the vacancy increases and its symmetry is lowered. The positron wavefunction is well localized in the defect and calculated positron lifetimes are in agreement with experiment. We also present a comparative study of measured and calculated 2D-ACAR spectra for the bulk and the VAs- vacancy. The experimental and theoretical results are in good agreement and show remarkable differences between positrons annihilating in the bulk and the VAs- vacancy.
Original language | English (US) |
---|---|
Pages (from-to) | 363-366 |
Number of pages | 4 |
Journal | Materials Science Forum |
Volume | 175-178 |
Issue number | pt 1 |
State | Published - 1995 |
Externally published | Yes |
Event | Proceedings of the 10th International Conference on Positron Annihilation. Part 1 (of 2) - Beijing, China Duration: May 23 1994 → May 29 1994 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering