Positron trapping at a negatively charged as vacancy in GaAs

L. Gilgien, G. Galli, F. Gygi, R. Car, R. Ambigapathy, A. A. Manuel

Research output: Contribution to journalConference article

Abstract

We present an ab initio study of positron trapping at a VAs- vacancy in GaAs which self-consistently includes lattice relaxations induced by the positron. In the presence of a positron, the volume of the vacancy increases and its symmetry is lowered. The positron wavefunction is well localized in the defect and calculated positron lifetimes are in agreement with experiment. We also present a comparative study of measured and calculated 2D-ACAR spectra for the bulk and the VAs- vacancy. The experimental and theoretical results are in good agreement and show remarkable differences between positrons annihilating in the bulk and the VAs- vacancy.

Original languageEnglish (US)
Pages (from-to)363-366
Number of pages4
JournalMaterials Science Forum
Volume175-178
Issue numberpt 1
StatePublished - Jan 1 1995
Externally publishedYes
EventProceedings of the 10th International Conference on Positron Annihilation. Part 1 (of 2) - Beijing, China
Duration: May 23 1994May 29 1994

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Gilgien, L., Galli, G., Gygi, F., Car, R., Ambigapathy, R., & Manuel, A. A. (1995). Positron trapping at a negatively charged as vacancy in GaAs. Materials Science Forum, 175-178(pt 1), 363-366.