Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting

T. I. Kamins, D. A.A. Ohlberg, R. Stanley Williams, W. Zhang, S. Y. Chou

Research output: Contribution to journalArticle

66 Scopus citations

Abstract

Strain energy from the lattice mismatch of a heteroepitaxial system can create "self-assembled," single-crystal islands irregularly arranged on the surface. Alternatively, features of tens of nanometers can be patterned on a substrate by "nanoimprinting" using a mold and etching. When these two techniques are combined, the small patterned features can interact with the self-assembly process, causing the islands to form at the patterned features. The resulting regular array of very small islands may be useful for future devices. The positioning of single-crystal Ge islands by Si mesas formed by nanoimprinting and etching is demonstrated in this letter.

Original languageEnglish (US)
Pages (from-to)1773-1775
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number12
DOIs
StatePublished - Mar 22 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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