Abstract
Strain energy from the lattice mismatch of a heteroepitaxial system can create "self-assembled," single-crystal islands irregularly arranged on the surface. Alternatively, features of tens of nanometers can be patterned on a substrate by "nanoimprinting" using a mold and etching. When these two techniques are combined, the small patterned features can interact with the self-assembly process, causing the islands to form at the patterned features. The resulting regular array of very small islands may be useful for future devices. The positioning of single-crystal Ge islands by Si mesas formed by nanoimprinting and etching is demonstrated in this letter.
Original language | English (US) |
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Pages (from-to) | 1773-1775 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 74 |
Issue number | 12 |
DOIs | |
State | Published - Mar 22 1999 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)