TY - JOUR
T1 - Pore formation and removal in solution-processed amorphous arsenic sulfide films
AU - Zha, Yunlai
AU - Fingerman, Samuel
AU - Cantrell, Stanley J.
AU - Arnold, Craig B.
N1 - Funding Information:
This work is supported by the NSF grant EEC-0540832 through the Mid-Infrared Technologies for Health and the Environment (MIRTHE) center. The authors acknowledge the use of the PRISM Imaging and Analysis Center, which is supported in part by the Princeton Center for Complex Materials , NSF grant DMR-0819860 . The authors are thankful for the contributions of Maike Waldmann and Chao Lu in support of this work.
PY - 2013
Y1 - 2013
N2 - This paper studies the formation of nanopores in solution-processed amorphous arsenic sulfide films and provides an effective method to remove such pores. Nanopores are observed mainly in the bulk of the film after being annealed above 120 C, and pore sizes are determined to increase with both baking temperature and duration. These observations are explained by a vacancy coalescence mechanism in the context of propylamine solvent. By adding a second solvent, ethylenediamine (EDA), to the original solution, we can essentially modify the material dissolution and annealing chemistry. Most pores are removed when 10% EDA is added, rendering a homogeneous film. The work presented here has great implications for improving the quality of optical chalcogenide components processed with solution methods. It also reinforces the pore formation mechanism that has been relevant to many solution-processed materials.
AB - This paper studies the formation of nanopores in solution-processed amorphous arsenic sulfide films and provides an effective method to remove such pores. Nanopores are observed mainly in the bulk of the film after being annealed above 120 C, and pore sizes are determined to increase with both baking temperature and duration. These observations are explained by a vacancy coalescence mechanism in the context of propylamine solvent. By adding a second solvent, ethylenediamine (EDA), to the original solution, we can essentially modify the material dissolution and annealing chemistry. Most pores are removed when 10% EDA is added, rendering a homogeneous film. The work presented here has great implications for improving the quality of optical chalcogenide components processed with solution methods. It also reinforces the pore formation mechanism that has been relevant to many solution-processed materials.
KW - Chalcogenides
KW - Porous materials
KW - Solution-process
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U2 - 10.1016/j.jnoncrysol.2013.03.014
DO - 10.1016/j.jnoncrysol.2013.03.014
M3 - Article
AN - SCOPUS:84876135303
SN - 0022-3093
VL - 369
SP - 11
EP - 16
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
ER -