Polycrystalline Si_1-x-yGe_xC_y for suppression of boron penetration in PMOS structures

Physics & Astronomy

• boron 75%
• penetration 72%
• retarding 67%
• carbon 29%
• oxides 27%
• depletion 19%
• vapor deposition 16%

Engineering & Materials Science

• Boron 100%
• Oxides 50%
• Carbon 44%
• Chemical potential 43%
• Chemical vapor deposition 34%
• Hot Temperature 14%

Chemical Compounds

• Polycrystalline Solid 78%
• Boron Atom 76%
• Chemical Potential 33%
• Oxide 31%
• Carbon Atom 27%