Polycrystalline Si1-x-yGexCy for suppression of boron penetration in PMOS structures

C. L. Chang; J. C. Sturm

Polycrystalline Si_1-x-yGe_xC_y for suppression of boron penetration in PMOS structures

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have fabricated polycrystalline Si_1-x-y by Rapid Thermal Chemical Vapor Deposition and used it as part of a polycrystalline gate structure for PMOS devices. The results showed that the use of carbon in polycrystalline Si_1-x-y suppressed boron penetration across the gate oxide. No effects of gate depletion with the use of poly-Si_1-x-y were observed. Our work suggests that the addition of carbon reduced the chemical potential of boron in Si_1-x-y, which deterred boron from diffusing across the underlying gate oxide.

Original language	English (US)
Pages (from-to)	213-218
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	525
State	Published - 1998
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 15 1998

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Polycrystalline Si1-x-yGexCy for suppression of boron penetration in PMOS structures",

abstract = "We have fabricated polycrystalline Si1-x-y by Rapid Thermal Chemical Vapor Deposition and used it as part of a polycrystalline gate structure for PMOS devices. The results showed that the use of carbon in polycrystalline Si1-x-y suppressed boron penetration across the gate oxide. No effects of gate depletion with the use of poly-Si1-x-y were observed. Our work suggests that the addition of carbon reduced the chemical potential of boron in Si1-x-y, which deterred boron from diffusing across the underlying gate oxide.",

author = "Chang, {C. L.} and Sturm, {J. C.}",

year = "1998",

language = "English (US)",

volume = "525",

pages = "213--218",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Spring Symposium ; Conference date: 13-04-1998 Through 15-04-1998",

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TY - JOUR

T1 - Polycrystalline Si1-x-yGexCy for suppression of boron penetration in PMOS structures

AU - Chang, C. L.

AU - Sturm, J. C.

PY - 1998

Y1 - 1998

N2 - We have fabricated polycrystalline Si1-x-y by Rapid Thermal Chemical Vapor Deposition and used it as part of a polycrystalline gate structure for PMOS devices. The results showed that the use of carbon in polycrystalline Si1-x-y suppressed boron penetration across the gate oxide. No effects of gate depletion with the use of poly-Si1-x-y were observed. Our work suggests that the addition of carbon reduced the chemical potential of boron in Si1-x-y, which deterred boron from diffusing across the underlying gate oxide.

AB - We have fabricated polycrystalline Si1-x-y by Rapid Thermal Chemical Vapor Deposition and used it as part of a polycrystalline gate structure for PMOS devices. The results showed that the use of carbon in polycrystalline Si1-x-y suppressed boron penetration across the gate oxide. No effects of gate depletion with the use of poly-Si1-x-y were observed. Our work suggests that the addition of carbon reduced the chemical potential of boron in Si1-x-y, which deterred boron from diffusing across the underlying gate oxide.

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M3 - Conference article

AN - SCOPUS:0031621075

SN - 0272-9172

VL - 525

SP - 213

EP - 218

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Symposium

Y2 - 13 April 1998 through 15 April 1998

ER -

Polycrystalline Si_1-x-yGe_xC_y for suppression of boron penetration in PMOS structures

Abstract

All Science Journal Classification (ASJC) codes

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