Polycrystalline Si1-x-yGexCy for suppression of boron penetration in PMOS structures

C. L. Chang, J. C. Sturm

Research output: Contribution to journalConference article

Abstract

We have fabricated polycrystalline Si1-x-y by Rapid Thermal Chemical Vapor Deposition and used it as part of a polycrystalline gate structure for PMOS devices. The results showed that the use of carbon in polycrystalline Si1-x-y suppressed boron penetration across the gate oxide. No effects of gate depletion with the use of poly-Si1-x-y were observed. Our work suggests that the addition of carbon reduced the chemical potential of boron in Si1-x-y, which deterred boron from diffusing across the underlying gate oxide.

Original languageEnglish (US)
Pages (from-to)213-218
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume525
StatePublished - Jan 1 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 15 1998

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Polycrystalline Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> for suppression of boron penetration in PMOS structures'. Together they form a unique fingerprint.

  • Cite this