Polycrystalline Si1-x-yGexCy for suppression of boron penetration in PMOS structures

C. L. Chang, J. C. Sturm

Research output: Contribution to journalConference articlepeer-review


We have fabricated polycrystalline Si1-x-y by Rapid Thermal Chemical Vapor Deposition and used it as part of a polycrystalline gate structure for PMOS devices. The results showed that the use of carbon in polycrystalline Si1-x-y suppressed boron penetration across the gate oxide. No effects of gate depletion with the use of poly-Si1-x-y were observed. Our work suggests that the addition of carbon reduced the chemical potential of boron in Si1-x-y, which deterred boron from diffusing across the underlying gate oxide.

Original languageEnglish (US)
Pages (from-to)213-218
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1998
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 15 1998

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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