Abstract
We have fabricated polycrystalline Si1-x-y by Rapid Thermal Chemical Vapor Deposition and used it as part of a polycrystalline gate structure for PMOS devices. The results showed that the use of carbon in polycrystalline Si1-x-y suppressed boron penetration across the gate oxide. No effects of gate depletion with the use of poly-Si1-x-y were observed. Our work suggests that the addition of carbon reduced the chemical potential of boron in Si1-x-y, which deterred boron from diffusing across the underlying gate oxide.
Original language | English (US) |
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Pages (from-to) | 213-218 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 525 |
State | Published - 1998 |
Event | Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 13 1998 → Apr 15 1998 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering