Polycrystalline Silicon Thin-Film Transistors on Flexible Steel Foil Substrates for Complementary-Metal-Oxide-Silicon Technology

Ming Wu, James C. Sturm, Sigurd Wagner

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

We made complementary metal-oxide-silicon circuits from polycrystalline silicon thin film transistors on steel foil substrates. As-rolled steel foils can be planarized and electrically insulated with a combination of spin-on and plasma-deposited SiO2, which also functions as the barrier against contaminant diffusion. The processes at temperatures of up to 950 °C include the furnace crystallization of amorphous silicon precursor films, thermal annealing of ion implants in self-aligned geometries, and thermal oxidation of the polycrystalline silicon film. Individual thin film transistors have reached electron and hole mobilities of 60 cm2V -1s-1 and 15 cm2V-1s-1, respectively. The propagation delay in ring oscillators is 1 us per gate, and is determined by the channel resistance and the coupling capacitance between thin film transistor and substrate. Our work introduces polycrystalline silicon circuits on steel foil as a robust technology for flexible backplanes.

Original languageEnglish (US)
Pages (from-to)3-12
Number of pages10
JournalSolid State Phenomena
Volume93
DOIs
StatePublished - 2003
EventPolycrystalline Semiconductors VII - Nara, United States
Duration: Sep 10 2003Sep 13 2003

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Keywords

  • Complementary Metal-Oxide-Semiconductor Circuit
  • Polycrystalline Silicon
  • Steel Foil Substrate
  • Thin-Film Transistor

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