Abstract
We made complementary metal-oxide-silicon circuits from polycrystalline silicon thin film transistors on steel foil substrates. As-rolled steel foils can be planarized and electrically insulated with a combination of spin-on and plasma-deposited SiO2, which also functions as the barrier against contaminant diffusion. The processes at temperatures of up to 950 °C include the furnace crystallization of amorphous silicon precursor films, thermal annealing of ion implants in self-aligned geometries, and thermal oxidation of the polycrystalline silicon film. Individual thin film transistors have reached electron and hole mobilities of 60 cm2V -1s-1 and 15 cm2V-1s-1, respectively. The propagation delay in ring oscillators is 1 us per gate, and is determined by the channel resistance and the coupling capacitance between thin film transistor and substrate. Our work introduces polycrystalline silicon circuits on steel foil as a robust technology for flexible backplanes.
Original language | English (US) |
---|---|
Pages (from-to) | 3-12 |
Number of pages | 10 |
Journal | Solid State Phenomena |
Volume | 93 |
DOIs | |
State | Published - 2003 |
Event | Polycrystalline Semiconductors VII - Nara, United States Duration: Sep 10 2003 → Sep 13 2003 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- General Materials Science
- Condensed Matter Physics
Keywords
- Complementary Metal-Oxide-Semiconductor Circuit
- Polycrystalline Silicon
- Steel Foil Substrate
- Thin-Film Transistor