Polaritons composed of 2DEG Fermi-edge transitions in a GaAs/AlGaAs modulation doped quantum well embedded in a microcavity

A. Gabbay, Yulia Preezant, E. Cohen, B. M. Ashkinadze, L. N. Pfeiffer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The reflection and photoluminescence spectra of a GaAs/Al 0.1Ga0.9As structure consisting of a modulation doped quantum well embedded in a microcavity (MC) were studied under a perpendicularly applied magnetic field (B < 7T) and at T = 2K. The two dimensional electron gas (2DEG) density in the quantum well was 1.8 × 1011 cm -2. Sharp lines are observed, whose energy dependence on the energy of the MC-confined photon identifies them as cavity polaritons, similar to those observed in structures of an undoped quantum well embedded in a MC. We show that they arise from the strong coupling between the MC-confined photons and interband transitions above the Fermi edge or inter-Landau level transitions of the 2DEG.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages1123-1124
Number of pages2
DOIs
StatePublished - 2007
Externally publishedYes
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: Jul 24 2006Jul 28 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/TerritoryAustria
CityVienna
Period7/24/067/28/06

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Keywords

  • 2DEG
  • Microcavity
  • Polaritons

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