Polariton-electron scattering in a semiconductor microcavity

G. Ramon; R. Rapaport; A. Qarry; E. Cohen; A. Mann; A. Ron; L. N. Pfeiffer

doi:10.1002/1521-396X(200204)190:2<453::AID-PSSA453>3.0.CO;2-O

Polariton-electron scattering in a semiconductor microcavity

G. Ramon, R. Rapaport, A. Qarry, E. Cohen, A. Mann, A. Ron, L. N. Pfeiffer

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of a classical electron gas on the cavity polariton linewidths is studied experimentally at T = 80 K in a GaAs/AlAs microcavity with an embedded quantum well. The linewidth dependence on the electron density and on the cavity mode energy is explained by a theoretical model based on the asymmetric bare exciton line shape, due to electron-exciton scattering.

Original language	English (US)
Pages (from-to)	453-457
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	190
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200204)190:2<453::AID-PSSA453>3.0.CO;2-O
State	Published - Apr 2002
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-396X(200204)190:2<453::AID-PSSA453>3.0.CO;2-O

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title = "Polariton-electron scattering in a semiconductor microcavity",

abstract = "The effect of a classical electron gas on the cavity polariton linewidths is studied experimentally at T = 80 K in a GaAs/AlAs microcavity with an embedded quantum well. The linewidth dependence on the electron density and on the cavity mode energy is explained by a theoretical model based on the asymmetric bare exciton line shape, due to electron-exciton scattering.",

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year = "2002",

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T1 - Polariton-electron scattering in a semiconductor microcavity

AU - Ramon, G.

AU - Rapaport, R.

AU - Qarry, A.

AU - Cohen, E.

AU - Mann, A.

AU - Ron, A.

AU - Pfeiffer, L. N.

PY - 2002/4

Y1 - 2002/4

N2 - The effect of a classical electron gas on the cavity polariton linewidths is studied experimentally at T = 80 K in a GaAs/AlAs microcavity with an embedded quantum well. The linewidth dependence on the electron density and on the cavity mode energy is explained by a theoretical model based on the asymmetric bare exciton line shape, due to electron-exciton scattering.

AB - The effect of a classical electron gas on the cavity polariton linewidths is studied experimentally at T = 80 K in a GaAs/AlAs microcavity with an embedded quantum well. The linewidth dependence on the electron density and on the cavity mode energy is explained by a theoretical model based on the asymmetric bare exciton line shape, due to electron-exciton scattering.

UR - https://www.scopus.com/pages/publications/0036544010

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U2 - 10.1002/1521-396X(200204)190:2<453::AID-PSSA453>3.0.CO;2-O

DO - 10.1002/1521-396X(200204)190:2<453::AID-PSSA453>3.0.CO;2-O

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

ER -

Polariton-electron scattering in a semiconductor microcavity

Abstract

All Science Journal Classification (ASJC) codes

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