TY - JOUR
T1 - Plastic deformation of thin foil substrates with amorphous silicon islands into spherical shapes
AU - Hsu, P. H.I.
AU - Huang, M.
AU - Wagner, S.
AU - Suo, Z.
AU - Sturm, J. C.
N1 - Funding Information:
The authors gratefully acknowledge the support from DARPA/ONR and the assistance of H. Gleskova with PECVD deposition.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2000
Y1 - 2000
N2 - There is a growing interest in the application of large area electronics on curved surfaces. One approach towards realizing this goal is to fabricate circuits on planar substrates of thin plastic or metal foil, which are subsequently deformed into arbitrary shapes. The problem that we consider here is the deformation of substrates into a spherical shape, where the strain is determined by geometry and cannot be reduced by simply using a thinner substrate. The goal is to achieve permanent, plastic deformation in the substrates, without exceeding fracture or buckling limits in the device materials. Our experiments consist of the planar fabrication of amorphous silicon device structures onto stainless steel or Kapton® polyimide substrates, followed by permanent deformation into a spherical shape. We will present empirical experiments showing the dependence of the results on the island/line size of the device materials and the deformation temperature. We have successfully deformed Kapton® polyimide substrates with 100 μm wide amorphous silicon islands into a one steradian spherical cap, which subtends 66 degrees, without degradation of the silicon. This work demonstrates the feasibility of building semiconductor devices on plastically deformed substrates despite a 5% average biaxial strain in the substrate after deformation.
AB - There is a growing interest in the application of large area electronics on curved surfaces. One approach towards realizing this goal is to fabricate circuits on planar substrates of thin plastic or metal foil, which are subsequently deformed into arbitrary shapes. The problem that we consider here is the deformation of substrates into a spherical shape, where the strain is determined by geometry and cannot be reduced by simply using a thinner substrate. The goal is to achieve permanent, plastic deformation in the substrates, without exceeding fracture or buckling limits in the device materials. Our experiments consist of the planar fabrication of amorphous silicon device structures onto stainless steel or Kapton® polyimide substrates, followed by permanent deformation into a spherical shape. We will present empirical experiments showing the dependence of the results on the island/line size of the device materials and the deformation temperature. We have successfully deformed Kapton® polyimide substrates with 100 μm wide amorphous silicon islands into a one steradian spherical cap, which subtends 66 degrees, without degradation of the silicon. This work demonstrates the feasibility of building semiconductor devices on plastically deformed substrates despite a 5% average biaxial strain in the substrate after deformation.
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U2 - 10.1557/proc-621-q8.6.1
DO - 10.1557/proc-621-q8.6.1
M3 - Conference article
AN - SCOPUS:0034431464
SN - 0272-9172
VL - 621
SP - Q861-Q866
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays
Y2 - 25 April 2000 through 27 April 2000
ER -