Plasma-surface interactions of advanced photoresists with C4 F8 Ar discharges: Plasma parameter dependencies

Keyphrases

• Adamantyl 20%
• Bias Power 40%
• Bias Pressure 20%
• Blanket 20%
• Contact Hole 20%
• Discharge Plasma 100%
• Energy Required 20%
• Excess Energy 20%
• Fluorination 40%
• Fluorocarbon Gases 20%
• Gas Additive 20%
• Intensity Ratio 20%
• Ion Energy 20%
• Ion Fluence 20%
• Ion-induced 20%
• Methacrylate 20%
• Mirror Surface 20%
• Molecular Compounds 20%
• Molecular Structure 20%
• Nanoscale Engineering 20%
• Parameter Dependency 100%
• Pattern Transfer 20%
• Photoresist 100%
• Photoresist Material 20%
• Photoresist Removal 20%
• Physical Patterns 20%
• Plasma Etching 80%
• Plasma Parameters 100%
• Plasma Sources 20%
• Plasma-surface Interaction 100%
• Polymer Surface 20%
• Power Level 20%
• Power Source 40%
• Recurring 20%
• Removal Rate 20%
• Selective Ion 20%
• Self-bias Voltage 20%
• Sidewall 40%
• Sidewall Roughness 40%
• Surface Condition 20%
• Surface Energy Density 20%
• Surface Fluorination 60%
• Surface Morphology 20%
• Surface Roughening 60%
• Surface Roughness 60%
• Three-dimensional (3D) 20%
• Top Surface 40%
• Transfer Mechanism 20%
• Trench Hole 20%
• Volume Element 20%
• X-ray Photoelectron Spectroscopy 20%

Material Science

• Energy Density 33%
• Film 33%
• Molecular Structure 33%
• Photoemission Spectroscopy 33%
• Plasma Etching 33%
• Polymer 100%
• Rough Surface 33%
• Surface Energy 33%
• Surface Morphology 33%
• Surface Roughness 33%