Abstract
Chemical and chemical engineering principles involved in plasma-enhanced etching and deposition are reviewed. Modeling approaches to describe and predict plasma behavior are indicated, and specific examples of plasma-enhanced etching and deposition of thin-film materials of interest to the fabrication of microelectronic and optical devices are discussed.
| Original language | English (US) |
|---|---|
| Title of host publication | Microelectronics Processing |
| Subtitle of host publication | Chemical Engineering Aspects |
| Publisher | Publ by ACS |
| Pages | 377-440 |
| Number of pages | 64 |
| Edition | 221 |
| ISBN (Print) | 0841214751 |
| State | Published - 1989 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Engineering