Planar double gate quantum wire transistor

S. Y. Chou, Y. Wang

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A planar double gate quantum wire transistor (QWT) is proposed and demonstrated. The transistor uses a narrow wire gate placed inside the gap of a split gate to create a single one-dimensional (1D) quantum wire (QW). We demonstrate theoretically and experimentally that the wire gate can create a QW potential with a better confinement and therefore larger subband separations than that in other split-gate QWTs, and that the split gate can adjust the number of electrons inside the QW while keeping the 1D QW potential almost unchanged. Furthermore, we found that, in the double gate QWT, a 1D electron channel can spatially overlap with a 2D electron channel without significant mixing.

Original languageEnglish (US)
Pages (from-to)788-790
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number6
DOIs
StatePublished - 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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