Abstract
We predict the appearance of a uniform magnetization in strained three-dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.
| Original language | English (US) |
|---|---|
| Article number | 033203 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 72 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jul 15 2005 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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