We predict the appearance of a uniform magnetization in strained three-dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jul 15 2005|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics