Piezo-magnetoelectric effects in p-doped semiconductors

B. Andrei Bernevig, Oskar Vafek

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


We predict the appearance of a uniform magnetization in strained three-dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.

Original languageEnglish (US)
Article number033203
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number3
StatePublished - Jul 15 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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