Piezo-magnetoelectric effects in p-doped semiconductors

B. Andrei Bernevig; Oskar Vafek

doi:10.1103/PhysRevB.72.033203

Piezo-magnetoelectric effects in p-doped semiconductors

B. Andrei Bernevig, Oskar Vafek

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

We predict the appearance of a uniform magnetization in strained three-dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.

Original language	English (US)
Article number	033203
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.72.033203
State	Published - Jul 15 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.72.033203

Cite this

@article{55d41125e3fa45e39d6311c6b878d9b3,

title = "Piezo-magnetoelectric effects in p-doped semiconductors",

abstract = "We predict the appearance of a uniform magnetization in strained three-dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.",

author = "Bernevig, {B. Andrei} and Oskar Vafek",

year = "2005",

month = jul,

day = "15",

doi = "10.1103/PhysRevB.72.033203",

language = "English (US)",

volume = "72",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "3",

}

TY - JOUR

T1 - Piezo-magnetoelectric effects in p-doped semiconductors

AU - Bernevig, B. Andrei

AU - Vafek, Oskar

PY - 2005/7/15

Y1 - 2005/7/15

N2 - We predict the appearance of a uniform magnetization in strained three-dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.

AB - We predict the appearance of a uniform magnetization in strained three-dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=33749159506&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749159506&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.72.033203

DO - 10.1103/PhysRevB.72.033203

M3 - Article

AN - SCOPUS:33749159506

SN - 1098-0121

VL - 72

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 3

M1 - 033203

ER -

Piezo-magnetoelectric effects in p-doped semiconductors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this