Picosecond silicon metal-semiconductor-metal photodiode

Thomas Y. Hsiang, Sotiris Alexandrou, Chia Chi Wang, Mark Y. Liu, Stephen Y. Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with finger widths and spacings down to 200 nm, subjected to femtosecond optical pulse excitations, was measured with a subpicosecond electro-optic sampling system. Electrical responses with fullwidth at half-maximum (FWHM) as short as 3.7 ps, at a corresponding 3 dB bandwidth of 110 GHz, were generated by violet-light excitation. These diodes are the fastest silicon photodetectors reported to date. Detailed bias and light-intensity dependence of the diode response has been measured. These results are used to obtain the velocity-field relation of electrons in silicon and to demonstrate the ideal transit-time-limited response of the diodes.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages76-82
Number of pages7
ISBN (Print)0819412716, 9780819412713
DOIs
StatePublished - Jan 1 1993
Externally publishedYes

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2022
ISSN (Print)0277-786X

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Hsiang, T. Y., Alexandrou, S., Wang, C. C., Liu, M. Y., & Chou, S. Y. (1993). Picosecond silicon metal-semiconductor-metal photodiode. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 76-82). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2022). Publ by Society of Photo-Optical Instrumentation Engineers. https://doi.org/10.1117/12.158589