@inproceedings{0cc396af99574c158b5e83eb83daa784,
title = "Picosecond silicon metal-semiconductor-metal photodiode",
abstract = "The ultrafast characteristics of crystalline-silicon metal-semiconductor-metal (MSM) photodiodes with finger widths and spacings down to 200 nm, subjected to femtosecond optical pulse excitations, was measured with a subpicosecond electro-optic sampling system. Electrical responses with fullwidth at half-maximum (FWHM) as short as 3.7 ps, at a corresponding 3 dB bandwidth of 110 GHz, were generated by violet-light excitation. These diodes are the fastest silicon photodetectors reported to date. Detailed bias and light-intensity dependence of the diode response has been measured. These results are used to obtain the velocity-field relation of electrons in silicon and to demonstrate the ideal transit-time-limited response of the diodes.",
author = "Hsiang, {Thomas Y.} and Sotiris Alexandrou and Wang, {Chia Chi} and Liu, {Mark Y.} and Chou, {Stephen Y.}",
year = "1993",
doi = "10.1117/12.158589",
language = "English (US)",
isbn = "0819412716",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Society of Photo-Optical Instrumentation Engineers",
pages = "76--82",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
}