Physical modelling of non-invasive silicon temperature measurement by infrared absorption

J. C. Sturm, C. M. Reaves

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

It has recently been shown that the temperature of silicon wafers can be measured in situ in rapid thermal processing reactors by monitoring the infrared absorption of the substrate at specific wavelengths. In the present work, a physical model of infrared absorption in silicon is used to determine the dominant absorption mechanisms in the relevant temperature and wavelength ranges. The model is then used to predict the ultimate temperature ranges of applicability of the technique and to show the effects of heavy doping. Since free carrier absorption dominates at wavelengths over 1.55 mu m, approximately 850 degrees C may be estimated as an upper limit for the technique of silicon temperature measurement by infrared transmission. Because bandgap absorption dominates at short wavelengths, the technique may be extended to temperatures as low as 77 K.

Original languageEnglish (US)
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages895-898
Number of pages4
ISBN (Electronic)0780302435
DOIs
StatePublished - Jan 1 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: Dec 8 1991Dec 11 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1991-January
ISSN (Print)0163-1918

Other

OtherInternational Electron Devices Meeting, IEDM 1991
CountryUnited States
CityWashington
Period12/8/9112/11/91

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Electromagnetic wave absorption
  • Inductors
  • Monitoring
  • Rapid thermal processing
  • Semiconductor device modeling
  • Semiconductor process modeling
  • Silicon
  • Temperature distribution
  • Temperature measurement
  • Wavelength measurement

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