TY - GEN
T1 - Physical modelling of non-invasive silicon temperature measurement by infrared absorption
AU - Sturm, J. C.
AU - Reaves, C. M.
N1 - Publisher Copyright:
© 1991 IEEE.
PY - 1991
Y1 - 1991
N2 - It has recently been shown that the temperature of silicon wafers can be measured in situ in rapid thermal processing reactors by monitoring the infrared absorption of the substrate at specific wavelengths. In the present work, a physical model of infrared absorption in silicon is used to determine the dominant absorption mechanisms in the relevant temperature and wavelength ranges. The model is then used to predict the ultimate temperature ranges of applicability of the technique and to show the effects of heavy doping. Since free carrier absorption dominates at wavelengths over 1.55 mu m, approximately 850 degrees C may be estimated as an upper limit for the technique of silicon temperature measurement by infrared transmission. Because bandgap absorption dominates at short wavelengths, the technique may be extended to temperatures as low as 77 K.
AB - It has recently been shown that the temperature of silicon wafers can be measured in situ in rapid thermal processing reactors by monitoring the infrared absorption of the substrate at specific wavelengths. In the present work, a physical model of infrared absorption in silicon is used to determine the dominant absorption mechanisms in the relevant temperature and wavelength ranges. The model is then used to predict the ultimate temperature ranges of applicability of the technique and to show the effects of heavy doping. Since free carrier absorption dominates at wavelengths over 1.55 mu m, approximately 850 degrees C may be estimated as an upper limit for the technique of silicon temperature measurement by infrared transmission. Because bandgap absorption dominates at short wavelengths, the technique may be extended to temperatures as low as 77 K.
KW - Electromagnetic wave absorption
KW - Inductors
KW - Monitoring
KW - Rapid thermal processing
KW - Semiconductor device modeling
KW - Semiconductor process modeling
KW - Silicon
KW - Temperature distribution
KW - Temperature measurement
KW - Wavelength measurement
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U2 - 10.1109/IEDM.1991.235281
DO - 10.1109/IEDM.1991.235281
M3 - Conference contribution
AN - SCOPUS:84954137795
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 895
EP - 898
BT - International Electron Devices Meeting 1991, IEDM 1991
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Electron Devices Meeting, IEDM 1991
Y2 - 8 December 1991 through 11 December 1991
ER -