Photovoltaic quantum well infrared detector

K. W. Goossen; S. A. Lyon; K. Alavi

doi:10.1063/1.99022

Photovoltaic quantum well infrared detector

K. W. Goossen
, S. A. Lyon
, K. Alavi

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

A photovoltaic infrared detector based on photoemission from a single modulation doped GaAs-AlGaAs quantum well is presented. The modulation doping provides a built-in field which allows unbiased operation. We show results from a device which is sensitive to 180 meV (7 μm wavelength) light, with a bandwidth of 20 meV, for which we estimate the quantum efficiency to be 1%. We demonstrate that the detector may be tuned to different wavelengths by varying the width of the well.

Original language	English (US)
Pages (from-to)	1701-1703
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	20
DOIs	https://doi.org/10.1063/1.99022
State	Published - 1988

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.99022

Cite this

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title = "Photovoltaic quantum well infrared detector",

abstract = "A photovoltaic infrared detector based on photoemission from a single modulation doped GaAs-AlGaAs quantum well is presented. The modulation doping provides a built-in field which allows unbiased operation. We show results from a device which is sensitive to 180 meV (7 μm wavelength) light, with a bandwidth of 20 meV, for which we estimate the quantum efficiency to be 1\%. We demonstrate that the detector may be tuned to different wavelengths by varying the width of the well.",

author = "Goossen, \{K. W.\} and Lyon, \{S. A.\} and K. Alavi",

year = "1988",

doi = "10.1063/1.99022",

language = "English (US)",

volume = "52",

pages = "1701--1703",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

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T1 - Photovoltaic quantum well infrared detector

AU - Goossen, K. W.

AU - Lyon, S. A.

AU - Alavi, K.

PY - 1988

Y1 - 1988

N2 - A photovoltaic infrared detector based on photoemission from a single modulation doped GaAs-AlGaAs quantum well is presented. The modulation doping provides a built-in field which allows unbiased operation. We show results from a device which is sensitive to 180 meV (7 μm wavelength) light, with a bandwidth of 20 meV, for which we estimate the quantum efficiency to be 1%. We demonstrate that the detector may be tuned to different wavelengths by varying the width of the well.

AB - A photovoltaic infrared detector based on photoemission from a single modulation doped GaAs-AlGaAs quantum well is presented. The modulation doping provides a built-in field which allows unbiased operation. We show results from a device which is sensitive to 180 meV (7 μm wavelength) light, with a bandwidth of 20 meV, for which we estimate the quantum efficiency to be 1%. We demonstrate that the detector may be tuned to different wavelengths by varying the width of the well.

UR - https://www.scopus.com/pages/publications/0006159772

UR - https://www.scopus.com/pages/publications/0006159772#tab=citedBy

U2 - 10.1063/1.99022

DO - 10.1063/1.99022

M3 - Article

AN - SCOPUS:0006159772

SN - 0003-6951

VL - 52

SP - 1701

EP - 1703

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Photovoltaic quantum well infrared detector

Abstract

All Science Journal Classification (ASJC) codes

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