Photovoltaic quantum well infrared detector

K. W. Goossen; S. A. Lyon; K. Alavi

doi:10.1063/1.99022

Photovoltaic quantum well infrared detector

K. W. Goossen, S. A. Lyon, K. Alavi

Research output: Contribution to journal › Article › peer-review

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Abstract

A photovoltaic infrared detector based on photoemission from a single modulation doped GaAs-AlGaAs quantum well is presented. The modulation doping provides a built-in field which allows unbiased operation. We show results from a device which is sensitive to 180 meV (7 μm wavelength) light, with a bandwidth of 20 meV, for which we estimate the quantum efficiency to be 1%. We demonstrate that the detector may be tuned to different wavelengths by varying the width of the well.

Original language	English (US)
Pages (from-to)	1701-1703
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	20
DOIs	https://doi.org/10.1063/1.99022
State	Published - 1988

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.99022

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title = "Photovoltaic quantum well infrared detector",

abstract = "A photovoltaic infrared detector based on photoemission from a single modulation doped GaAs-AlGaAs quantum well is presented. The modulation doping provides a built-in field which allows unbiased operation. We show results from a device which is sensitive to 180 meV (7 μm wavelength) light, with a bandwidth of 20 meV, for which we estimate the quantum efficiency to be 1%. We demonstrate that the detector may be tuned to different wavelengths by varying the width of the well.",

author = "Goossen, {K. W.} and Lyon, {S. A.} and K. Alavi",

year = "1988",

doi = "10.1063/1.99022",

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journal = "Applied Physics Letters",

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T1 - Photovoltaic quantum well infrared detector

AU - Goossen, K. W.

AU - Lyon, S. A.

AU - Alavi, K.

PY - 1988

Y1 - 1988

N2 - A photovoltaic infrared detector based on photoemission from a single modulation doped GaAs-AlGaAs quantum well is presented. The modulation doping provides a built-in field which allows unbiased operation. We show results from a device which is sensitive to 180 meV (7 μm wavelength) light, with a bandwidth of 20 meV, for which we estimate the quantum efficiency to be 1%. We demonstrate that the detector may be tuned to different wavelengths by varying the width of the well.

AB - A photovoltaic infrared detector based on photoemission from a single modulation doped GaAs-AlGaAs quantum well is presented. The modulation doping provides a built-in field which allows unbiased operation. We show results from a device which is sensitive to 180 meV (7 μm wavelength) light, with a bandwidth of 20 meV, for which we estimate the quantum efficiency to be 1%. We demonstrate that the detector may be tuned to different wavelengths by varying the width of the well.

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U2 - 10.1063/1.99022

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

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Photovoltaic quantum well infrared detector

Abstract

All Science Journal Classification (ASJC) codes

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