Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells

A. Venu Gopal; Rajesh Kumar; A. S. Vengurlekar; A. Bosacchi; S. Franchi; L. N. Pfeiffer

doi:10.1063/1.372104

Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells

A. Venu Gopal, Rajesh Kumar, A. S. Vengurlekar, A. Bosacchi, S. Franchi, L. N. Pfeiffer

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

We obtain the temperature dependence of the homogeneous linewidth of excitons in GaAs quantum wells (QWs) and bulk GaAs using photoluminescence measurements. The results indicate that exciton scattering rates with optical phonons are larger in bulk GaAs than in QWs.

Original language	English (US)
Pages (from-to)	1858-1862
Number of pages	5
Journal	Journal of Applied Physics
Volume	87
Issue number	4
DOIs	https://doi.org/10.1063/1.372104
State	Published - Feb 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.372104

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@article{37749b12bb05475c84d5b72f38fd8750,

title = "Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells",

abstract = "We obtain the temperature dependence of the homogeneous linewidth of excitons in GaAs quantum wells (QWs) and bulk GaAs using photoluminescence measurements. The results indicate that exciton scattering rates with optical phonons are larger in bulk GaAs than in QWs.",

author = "{Venu Gopal}, A. and Rajesh Kumar and Vengurlekar, {A. S.} and A. Bosacchi and S. Franchi and Pfeiffer, {L. N.}",

year = "2000",

month = feb,

doi = "10.1063/1.372104",

language = "English (US)",

volume = "87",

pages = "1858--1862",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "4",

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T1 - Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells

AU - Venu Gopal, A.

AU - Kumar, Rajesh

AU - Vengurlekar, A. S.

AU - Bosacchi, A.

AU - Franchi, S.

AU - Pfeiffer, L. N.

PY - 2000/2

Y1 - 2000/2

N2 - We obtain the temperature dependence of the homogeneous linewidth of excitons in GaAs quantum wells (QWs) and bulk GaAs using photoluminescence measurements. The results indicate that exciton scattering rates with optical phonons are larger in bulk GaAs than in QWs.

AB - We obtain the temperature dependence of the homogeneous linewidth of excitons in GaAs quantum wells (QWs) and bulk GaAs using photoluminescence measurements. The results indicate that exciton scattering rates with optical phonons are larger in bulk GaAs than in QWs.

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U2 - 10.1063/1.372104

DO - 10.1063/1.372104

M3 - Article

AN - SCOPUS:0013086475

SN - 0021-8979

VL - 87

SP - 1858

EP - 1862

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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