Photoluminescence spectroscopy of localized excitons in Si1-xGex

L. C. Lenchyshyn; M. L.W. Thewalt; J. C. Sturm; P. V. Schwartz; N. L. Rowell; J. P. Noël; D. C. Houghton

doi:10.1007/BF02665032

Photoluminescence spectroscopy of localized excitons in Si_1-xGe_x

L. C. Lenchyshyn, M. L.W. Thewalt, J. C. Sturm, P. V. Schwartz, N. L. Rowell, J. P. Noël, D. C. Houghton

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We have recently found that high quantum efficiency can be achieved in strained Si_1-xGe_x alloy layers through the elimination of nonradiative channels. We observed a photoluminescence process in SiGe grown on 〈100232A; silicon by rapid thermal chemical vapor deposition, which was attributed to free excitons localized by random fluctuations in alloy composition. The external quantum efficiency of this process was measured directly for a single Si_0.75Ge_0.25 quantum well and found to be extraordinarily high, about 11.5 ± 2%. In this paper, we present additional data on the localized exciton photoluminescence, including temperature dependence, time decay curves, and effects of sample annealing.

Original language	English (US)
Pages (from-to)	233-238
Number of pages	6
Journal	Journal of Electronic Materials
Volume	22
Issue number	2
DOIs	https://doi.org/10.1007/BF02665032
State	Published - Feb 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Localized excitons
SiGe
photoluminescence spectroscopy

Access to Document

10.1007/BF02665032

Cite this

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title = "Photoluminescence spectroscopy of localized excitons in Si1-xGex",

abstract = "We have recently found that high quantum efficiency can be achieved in strained Si1-xGex alloy layers through the elimination of nonradiative channels. We observed a photoluminescence process in SiGe grown on 〈100232A; silicon by rapid thermal chemical vapor deposition, which was attributed to free excitons localized by random fluctuations in alloy composition. The external quantum efficiency of this process was measured directly for a single Si0.75Ge0.25 quantum well and found to be extraordinarily high, about 11.5 ± 2%. In this paper, we present additional data on the localized exciton photoluminescence, including temperature dependence, time decay curves, and effects of sample annealing.",

keywords = "Localized excitons, SiGe, photoluminescence spectroscopy",

author = "Lenchyshyn, {L. C.} and Thewalt, {M. L.W.} and Sturm, {J. C.} and Schwartz, {P. V.} and Rowell, {N. L.} and No{\"e}l, {J. P.} and Houghton, {D. C.}",

year = "1993",

month = feb,

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T1 - Photoluminescence spectroscopy of localized excitons in Si1-xGex

AU - Lenchyshyn, L. C.

AU - Thewalt, M. L.W.

AU - Sturm, J. C.

AU - Schwartz, P. V.

AU - Rowell, N. L.

AU - Noël, J. P.

AU - Houghton, D. C.

PY - 1993/2

Y1 - 1993/2

N2 - We have recently found that high quantum efficiency can be achieved in strained Si1-xGex alloy layers through the elimination of nonradiative channels. We observed a photoluminescence process in SiGe grown on 〈100232A; silicon by rapid thermal chemical vapor deposition, which was attributed to free excitons localized by random fluctuations in alloy composition. The external quantum efficiency of this process was measured directly for a single Si0.75Ge0.25 quantum well and found to be extraordinarily high, about 11.5 ± 2%. In this paper, we present additional data on the localized exciton photoluminescence, including temperature dependence, time decay curves, and effects of sample annealing.

AB - We have recently found that high quantum efficiency can be achieved in strained Si1-xGex alloy layers through the elimination of nonradiative channels. We observed a photoluminescence process in SiGe grown on 〈100232A; silicon by rapid thermal chemical vapor deposition, which was attributed to free excitons localized by random fluctuations in alloy composition. The external quantum efficiency of this process was measured directly for a single Si0.75Ge0.25 quantum well and found to be extraordinarily high, about 11.5 ± 2%. In this paper, we present additional data on the localized exciton photoluminescence, including temperature dependence, time decay curves, and effects of sample annealing.

KW - Localized excitons

KW - SiGe

KW - photoluminescence spectroscopy

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