Photoluminescence of thin SI1-xGEx quantum wells

L. C. Lenchyshyn, M. L.W. Thewalt, D. C. Houghton, J. P. Noel, N. L. Rowell, J. C. Sturm, X. Xiao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Well-resolved band edge photoluminescence spectra were obtained from SiGe quantum wells of various widths. In addition to the usual shallow bound exciton features, we observed a highly efficient deeper luminescence process, under conditions of low excitation density, in thick SiGe quantum wells. This luminescence band can be attributed to excitons localized by fluctuations in alloy concentration. The binding energy of the localized exciton feature is found to decrease with decreasing well width. In the thinnest quantum well samples only a single luminescence feature is observed at all power levels, while in several other thin quantum well samples having very sharp lines the localized exciton feature appears at higher energy than the bound exciton. Despite these changes in the spectra, the localized exciton luminescence could be identified in all cases by its characteristic intensity saturation at low excitation power density, as well as its slow decay time (approx. 1 ms). The mechanism behind the changes in the localized exciton luminescence may originate from limiting the exciton motion to two dimensions in thin wells, which at low temperatures would hinder migration to the lowest energy alloy fluctuation centers.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages79-84
Number of pages6
ISBN (Print)1558991948, 9781558991941
DOIs
StatePublished - Jan 1 1993
Externally publishedYes
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: Apr 12 1993Apr 14 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume298
ISSN (Print)0272-9172

Other

OtherProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA
Period4/12/934/14/93

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Photoluminescence of thin SI<sub>1-x</sub>GE<sub>x</sub> quantum wells'. Together they form a unique fingerprint.

  • Cite this

    Lenchyshyn, L. C., Thewalt, M. L. W., Houghton, D. C., Noel, J. P., Rowell, N. L., Sturm, J. C., & Xiao, X. (1993). Photoluminescence of thin SI1-xGEx quantum wells. In Materials Research Society Symposium Proceedings (pp. 79-84). (Materials Research Society Symposium Proceedings; Vol. 298). Publ by Materials Research Society. https://doi.org/10.1557/proc-298-79