Photoluminescence of individual doped GaAsAlGaAs nanofabricated quantum dots

Sokratis Kalliakos; Ćsar Pascual García; Vittorio Pellegrini; Marian Zamfirescu; Lucia Cavigli; Massimo Gurioli; Anna Vinattieri; Aron Pinczuk; Brian S. Dennis; Loren N. Pfeiffer; Ken W. West

doi:10.1063/1.2734397

Photoluminescence of individual doped GaAsAlGaAs nanofabricated quantum dots

Sokratis Kalliakos, Ćsar Pascual García, Vittorio Pellegrini, Marian Zamfirescu, Lucia Cavigli, Massimo Gurioli, Anna Vinattieri, Aron Pinczuk, Brian S. Dennis, Loren N. Pfeiffer, Ken W. West

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Dilute arrays of GaAsAlGaAs modulation-doped quantum dots with same sizes fabricated by electron beam lithography and low impact reactive ion etching exhibit highly uniform luminescence lines. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Multicharged excitonic and biexcitonic emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated quantum dots for applications in areas that require fine control of optical emission.

Original language	English (US)
Article number	181902
Journal	Applied Physics Letters
Volume	90
Issue number	18
DOIs	https://doi.org/10.1063/1.2734397
State	Published - 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2734397

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title = "Photoluminescence of individual doped GaAsAlGaAs nanofabricated quantum dots",

abstract = "Dilute arrays of GaAsAlGaAs modulation-doped quantum dots with same sizes fabricated by electron beam lithography and low impact reactive ion etching exhibit highly uniform luminescence lines. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Multicharged excitonic and biexcitonic emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated quantum dots for applications in areas that require fine control of optical emission.",

author = "Sokratis Kalliakos and Garc{\'i}a, {{\'C}sar Pascual} and Vittorio Pellegrini and Marian Zamfirescu and Lucia Cavigli and Massimo Gurioli and Anna Vinattieri and Aron Pinczuk and Dennis, {Brian S.} and Pfeiffer, {Loren N.} and West, {Ken W.}",

year = "2007",

doi = "10.1063/1.2734397",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

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T1 - Photoluminescence of individual doped GaAsAlGaAs nanofabricated quantum dots

AU - Kalliakos, Sokratis

AU - García, Ćsar Pascual

AU - Pellegrini, Vittorio

AU - Zamfirescu, Marian

AU - Cavigli, Lucia

AU - Gurioli, Massimo

AU - Vinattieri, Anna

AU - Pinczuk, Aron

AU - Dennis, Brian S.

AU - Pfeiffer, Loren N.

AU - West, Ken W.

PY - 2007

Y1 - 2007

N2 - Dilute arrays of GaAsAlGaAs modulation-doped quantum dots with same sizes fabricated by electron beam lithography and low impact reactive ion etching exhibit highly uniform luminescence lines. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Multicharged excitonic and biexcitonic emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated quantum dots for applications in areas that require fine control of optical emission.

AB - Dilute arrays of GaAsAlGaAs modulation-doped quantum dots with same sizes fabricated by electron beam lithography and low impact reactive ion etching exhibit highly uniform luminescence lines. Single quantum dots display spectral emission with peak energies and linewidths linked largely to the geometrical diameter of the dot and to the built-in electron population. Multicharged excitonic and biexcitonic emission intensities have activation energy of about 2 meV. These results highlight the potential of high quality nanofabricated quantum dots for applications in areas that require fine control of optical emission.

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DO - 10.1063/1.2734397

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181902

ER -

Photoluminescence of individual doped GaAsAlGaAs nanofabricated quantum dots

Abstract

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