Photoluminescence of a high mobility 2DEG in the fractional quantum hall effect regime

D. Smirnov, V. V. Rudenkov, B. M. Ashkinadze, E. Cohen, P. C.M. Christianen, J. C. Maan, L. N. Pfeiffer

Research output: Contribution to journalArticlepeer-review


The magneto-PL spectra of modulation-doped, ultra-high mobility GaAs/AlGaAs single heterojunctions (HJs) were studied under a perpendicularly applied magnetic field up to 33 T and at temperatures of 0.3 and 1.2 K. The spectra show remarkable intensity redistribution between free (bulk) exciton and 2DEG-hole PL channels occurring at electron rilling factors, v = 2 and 1. At 0.3 K, significant 2DEG-hole PL spectral changes are observed near v =2/3 and 1/3. Several heterojunctions with 2DEG density in the range of n2D = (1 - 2.7) · 1011 cm-2 display similar features. These spectral peculiarities are attributed to the modification of the 2DEG energy spectrum caused by the e-e interaction, in particular, the recombination of valence hole with the composite (fractionally-charged) particles of the magnetized 2DEG. In HJs with lower n2D < 1011 cm -2, the observed PL evolution at v < 1 is mainly determined by an intensity redistribution between the σ+ and σ- circularly-polarized free exciton PL components. In this case, the exciton energy is lower than the energy of the 2DEG-hole system, so that the free excitons do not dissociate near the magnetized 2DEG and thus, the 2DEG-hole PL is barely observed.

Original languageEnglish (US)
Pages (from-to)1455-1459
Number of pages5
JournalInternational Journal of Modern Physics B
Issue number8-9
StatePublished - Apr 10 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics


  • Fractional QHE
  • Photoluminescence
  • Two-dimensional electrons


Dive into the research topics of 'Photoluminescence of a high mobility 2DEG in the fractional quantum hall effect regime'. Together they form a unique fingerprint.

Cite this