Photoluminescence from electron-hole plasmas confined in Si/Si 1-xGex/Si quantum wells

X. Xiao, C. W. Liu, J. C. Sturm, L. C. Lenchyshyn, M. L.W. Thewalt

Research output: Contribution to journalArticlepeer-review

54 Scopus citations


We report the first observation of photoluminescence from electron-hole plasmas in Si/Si0.8Ge0.2/Si quantum wells. While at liquid helium temperature, luminescence due to shallow bound excitons is observed. At 77 K electron-hole plasma (EHP) luminescence dominates the spectra over a wide range of pump powers. Convolution of the occupied electron and hole densities of states gives an excellent fit to the photoluminescence line shape. A band-gap reduction of up to 15 meV at high carrier densities is observed for wide quantum wells, but no such shift is detected for narrow quantum wells.

Original languageEnglish (US)
Pages (from-to)1720-1722
Number of pages3
JournalApplied Physics Letters
Issue number14
StatePublished - 1992

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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