Photoluminescence from electron-hole plasmas confined in Si/Si 1-xGex/Si quantum wells

X. Xiao; C. W. Liu; J. C. Sturm; L. C. Lenchyshyn; M. L.W. Thewalt

doi:10.1063/1.107196

Photoluminescence from electron-hole plasmas confined in Si/Si _1-xGe_x/Si quantum wells

X. Xiao, C. W. Liu, J. C. Sturm, L. C. Lenchyshyn, M. L.W. Thewalt

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54 Scopus citations

Abstract

We report the first observation of photoluminescence from electron-hole plasmas in Si/Si_0.8Ge_0.2/Si quantum wells. While at liquid helium temperature, luminescence due to shallow bound excitons is observed. At 77 K electron-hole plasma (EHP) luminescence dominates the spectra over a wide range of pump powers. Convolution of the occupied electron and hole densities of states gives an excellent fit to the photoluminescence line shape. A band-gap reduction of up to 15 meV at high carrier densities is observed for wide quantum wells, but no such shift is detected for narrow quantum wells.

Original language	English (US)
Pages (from-to)	1720-1722
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	14
DOIs	https://doi.org/10.1063/1.107196
State	Published - 1992

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.107196

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title = "Photoluminescence from electron-hole plasmas confined in Si/Si 1-xGex/Si quantum wells",

abstract = "We report the first observation of photoluminescence from electron-hole plasmas in Si/Si0.8Ge0.2/Si quantum wells. While at liquid helium temperature, luminescence due to shallow bound excitons is observed. At 77 K electron-hole plasma (EHP) luminescence dominates the spectra over a wide range of pump powers. Convolution of the occupied electron and hole densities of states gives an excellent fit to the photoluminescence line shape. A band-gap reduction of up to 15 meV at high carrier densities is observed for wide quantum wells, but no such shift is detected for narrow quantum wells.",

author = "X. Xiao and Liu, {C. W.} and Sturm, {J. C.} and Lenchyshyn, {L. C.} and Thewalt, {M. L.W.}",

year = "1992",

doi = "10.1063/1.107196",

language = "English (US)",

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pages = "1720--1722",

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T1 - Photoluminescence from electron-hole plasmas confined in Si/Si 1-xGex/Si quantum wells

AU - Xiao, X.

AU - Liu, C. W.

AU - Sturm, J. C.

AU - Lenchyshyn, L. C.

AU - Thewalt, M. L.W.

PY - 1992

Y1 - 1992

N2 - We report the first observation of photoluminescence from electron-hole plasmas in Si/Si0.8Ge0.2/Si quantum wells. While at liquid helium temperature, luminescence due to shallow bound excitons is observed. At 77 K electron-hole plasma (EHP) luminescence dominates the spectra over a wide range of pump powers. Convolution of the occupied electron and hole densities of states gives an excellent fit to the photoluminescence line shape. A band-gap reduction of up to 15 meV at high carrier densities is observed for wide quantum wells, but no such shift is detected for narrow quantum wells.

AB - We report the first observation of photoluminescence from electron-hole plasmas in Si/Si0.8Ge0.2/Si quantum wells. While at liquid helium temperature, luminescence due to shallow bound excitons is observed. At 77 K electron-hole plasma (EHP) luminescence dominates the spectra over a wide range of pump powers. Convolution of the occupied electron and hole densities of states gives an excellent fit to the photoluminescence line shape. A band-gap reduction of up to 15 meV at high carrier densities is observed for wide quantum wells, but no such shift is detected for narrow quantum wells.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Photoluminescence from electron-hole plasmas confined in Si/Si _1-xGe_x/Si quantum wells

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