Photoluminescence and electroluminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition

J. C. Sturm; X. Xiao; Q. Mi; C. W. Liu; A. St Amour; Z. Matutinovic-Krstelj; L. C. Lenchyshyn; M. L.W. Thewalt

doi:10.1016/0921-5107(93)90374-V

Photoluminescence and electroluminescence processes in Si_1-xGe_x/Si heterostructures grown by chemical vapor deposition

J. C. Sturm
, X. Xiao
, Q. Mi
, C. W. Liu
, A. St Amour
, Z. Matutinovic-Krstelj
, L. C. Lenchyshyn
, M. L.W. Thewalt

Research output: Contribution to journal › Article › peer-review

Abstract

Well-resolved band-edge exciton photoluminescence has been observed in strained Si_1-xGe_x quantum wells on Si(100). A growth technique which provides material with a low density of non-radiative centers and a uniform microstructure is necessary for observing such luminescence. The luminescence exhibits a characteristic no-phonon line due to the alloy randomnes, and a threefold splitting of the transverse optical phonon mode due to different nearest neighbor interactions. The luminescence has been observed from 2 to 300 K, and can also be electrically pumped (electroluminescence) to over 300 K, with peak emission from 1.3 to 1.5 μm.

Original language	English (US)
Pages (from-to)	307-311
Number of pages	5
Journal	Materials Science and Engineering B
Volume	21
Issue number	2-3
DOIs	https://doi.org/10.1016/0921-5107(93)90374-V
State	Published - Nov 20 1993

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0921-5107(93)90374-V

Cite this

@article{fc671281cf6940e384640968a6fff83d,

title = "Photoluminescence and electroluminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition",

abstract = "Well-resolved band-edge exciton photoluminescence has been observed in strained Si1-xGex quantum wells on Si(100). A growth technique which provides material with a low density of non-radiative centers and a uniform microstructure is necessary for observing such luminescence. The luminescence exhibits a characteristic no-phonon line due to the alloy randomnes, and a threefold splitting of the transverse optical phonon mode due to different nearest neighbor interactions. The luminescence has been observed from 2 to 300 K, and can also be electrically pumped (electroluminescence) to over 300 K, with peak emission from 1.3 to 1.5 μm.",

author = "Sturm, \{J. C.\} and X. Xiao and Q. Mi and Liu, \{C. W.\} and Amour, \{A. St\} and Z. Matutinovic-Krstelj and Lenchyshyn, \{L. C.\} and Thewalt, \{M. L.W.\}",

note = "Funding Information: the National Science Foundation;O ffice of Naval Research;N .J. Commissiono n Science and Technology( Princeton)N; aturalS ciencesa nd Engineering",

year = "1993",

month = nov,

day = "20",

doi = "10.1016/0921-5107(93)90374-V",

language = "English (US)",

volume = "21",

pages = "307--311",

journal = "Materials Science and Engineering B",

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publisher = "Elsevier Ltd",

number = "2-3",

}

TY - JOUR

T1 - Photoluminescence and electroluminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition

AU - Sturm, J. C.

AU - Xiao, X.

AU - Mi, Q.

AU - Liu, C. W.

AU - Amour, A. St

AU - Matutinovic-Krstelj, Z.

AU - Lenchyshyn, L. C.

AU - Thewalt, M. L.W.

N1 - Funding Information: the National Science Foundation;O ffice of Naval Research;N .J. Commissiono n Science and Technology( Princeton)N; aturalS ciencesa nd Engineering

PY - 1993/11/20

Y1 - 1993/11/20

N2 - Well-resolved band-edge exciton photoluminescence has been observed in strained Si1-xGex quantum wells on Si(100). A growth technique which provides material with a low density of non-radiative centers and a uniform microstructure is necessary for observing such luminescence. The luminescence exhibits a characteristic no-phonon line due to the alloy randomnes, and a threefold splitting of the transverse optical phonon mode due to different nearest neighbor interactions. The luminescence has been observed from 2 to 300 K, and can also be electrically pumped (electroluminescence) to over 300 K, with peak emission from 1.3 to 1.5 μm.

AB - Well-resolved band-edge exciton photoluminescence has been observed in strained Si1-xGex quantum wells on Si(100). A growth technique which provides material with a low density of non-radiative centers and a uniform microstructure is necessary for observing such luminescence. The luminescence exhibits a characteristic no-phonon line due to the alloy randomnes, and a threefold splitting of the transverse optical phonon mode due to different nearest neighbor interactions. The luminescence has been observed from 2 to 300 K, and can also be electrically pumped (electroluminescence) to over 300 K, with peak emission from 1.3 to 1.5 μm.

UR - https://www.scopus.com/pages/publications/0027703055

UR - https://www.scopus.com/pages/publications/0027703055#tab=citedBy

U2 - 10.1016/0921-5107(93)90374-V

DO - 10.1016/0921-5107(93)90374-V

M3 - Article

AN - SCOPUS:0027703055

SN - 0921-5107

VL - 21

SP - 307

EP - 311

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 2-3

ER -

Photoluminescence and electroluminescence processes in Si_1-xGe_x/Si heterostructures grown by chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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