Photoluminescence and electroluminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition

J. C. Sturm, X. Xiao, Q. Mi, C. W. Liu, A. St Amour, Z. Matutinovic-Krstelj, L. C. Lenchyshyn, M. L.W. Thewalt

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Well-resolved band-edge exciton photoluminescence has been observed in strained Si1-xGex quantum wells on Si(100). A growth technique which provides material with a low density of non-radiative centers and a uniform microstructure is necessary for observing such luminescence. The luminescence exhibits a characteristic no-phonon line due to the alloy randomnes, and a threefold splitting of the transverse optical phonon mode due to different nearest neighbor interactions. The luminescence has been observed from 2 to 300 K, and can also be electrically pumped (electroluminescence) to over 300 K, with peak emission from 1.3 to 1.5 μm.

Original languageEnglish (US)
Pages (from-to)307-311
Number of pages5
JournalMaterials Science and Engineering B
Issue number2-3
StatePublished - Nov 20 1993

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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