Photoluminescence and electroluminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition

J. C. Sturm; X. Xiao; Q. Mi; C. W. Liu; A. St Amour; Z. Matutinovic-Krstelj; L. C. Lenchyshyn; M. L.W. Thewalt

doi:10.1016/0921-5107(93)90374-V

Photoluminescence and electroluminescence processes in Si_1-xGe_x/Si heterostructures grown by chemical vapor deposition

J. C. Sturm, X. Xiao, Q. Mi, C. W. Liu, A. St Amour, Z. Matutinovic-Krstelj, L. C. Lenchyshyn, M. L.W. Thewalt

Research output: Contribution to journal › Article › peer-review

Abstract

Well-resolved band-edge exciton photoluminescence has been observed in strained Si_1-xGe_x quantum wells on Si(100). A growth technique which provides material with a low density of non-radiative centers and a uniform microstructure is necessary for observing such luminescence. The luminescence exhibits a characteristic no-phonon line due to the alloy randomnes, and a threefold splitting of the transverse optical phonon mode due to different nearest neighbor interactions. The luminescence has been observed from 2 to 300 K, and can also be electrically pumped (electroluminescence) to over 300 K, with peak emission from 1.3 to 1.5 μm.

Original language	English (US)
Pages (from-to)	307-311
Number of pages	5
Journal	Materials Science and Engineering B
Volume	21
Issue number	2-3
DOIs	https://doi.org/10.1016/0921-5107(93)90374-V
State	Published - Nov 20 1993

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Photoluminescence and electroluminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition",

abstract = "Well-resolved band-edge exciton photoluminescence has been observed in strained Si1-xGex quantum wells on Si(100). A growth technique which provides material with a low density of non-radiative centers and a uniform microstructure is necessary for observing such luminescence. The luminescence exhibits a characteristic no-phonon line due to the alloy randomnes, and a threefold splitting of the transverse optical phonon mode due to different nearest neighbor interactions. The luminescence has been observed from 2 to 300 K, and can also be electrically pumped (electroluminescence) to over 300 K, with peak emission from 1.3 to 1.5 μm.",

author = "Sturm, {J. C.} and X. Xiao and Q. Mi and Liu, {C. W.} and Amour, {A. St} and Z. Matutinovic-Krstelj and Lenchyshyn, {L. C.} and Thewalt, {M. L.W.}",

note = "Funding Information: the National Science Foundation;O ffice of Naval Research;N .J. Commissiono n Science and Technology( Princeton)N; aturalS ciencesa nd Engineering",

year = "1993",

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doi = "10.1016/0921-5107(93)90374-V",

language = "English (US)",

volume = "21",

pages = "307--311",

journal = "Materials Science and Engineering B",

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TY - JOUR

T1 - Photoluminescence and electroluminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition

AU - Sturm, J. C.

AU - Xiao, X.

AU - Mi, Q.

AU - Liu, C. W.

AU - Amour, A. St

AU - Matutinovic-Krstelj, Z.

AU - Lenchyshyn, L. C.

AU - Thewalt, M. L.W.

N1 - Funding Information: the National Science Foundation;O ffice of Naval Research;N .J. Commissiono n Science and Technology( Princeton)N; aturalS ciencesa nd Engineering

PY - 1993/11/20

Y1 - 1993/11/20

N2 - Well-resolved band-edge exciton photoluminescence has been observed in strained Si1-xGex quantum wells on Si(100). A growth technique which provides material with a low density of non-radiative centers and a uniform microstructure is necessary for observing such luminescence. The luminescence exhibits a characteristic no-phonon line due to the alloy randomnes, and a threefold splitting of the transverse optical phonon mode due to different nearest neighbor interactions. The luminescence has been observed from 2 to 300 K, and can also be electrically pumped (electroluminescence) to over 300 K, with peak emission from 1.3 to 1.5 μm.

AB - Well-resolved band-edge exciton photoluminescence has been observed in strained Si1-xGex quantum wells on Si(100). A growth technique which provides material with a low density of non-radiative centers and a uniform microstructure is necessary for observing such luminescence. The luminescence exhibits a characteristic no-phonon line due to the alloy randomnes, and a threefold splitting of the transverse optical phonon mode due to different nearest neighbor interactions. The luminescence has been observed from 2 to 300 K, and can also be electrically pumped (electroluminescence) to over 300 K, with peak emission from 1.3 to 1.5 μm.

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U2 - 10.1016/0921-5107(93)90374-V

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JF - Materials Science and Engineering B

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Photoluminescence and electroluminescence processes in Si_1-xGe_x/Si heterostructures grown by chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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