Photoluminescence and electroluminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition

J. C. Sturm, X. Xiao, Q. Mi, C. W. Liu, A. St Amour, Z. Matutinovic-Krstelj, L. C. Lenchyshyn, M. L.W. Thewalt

Research output: Contribution to journalArticle

Abstract

Well-resolved band-edge exciton photoluminescence has been observed in strained Si1-xGex quantum wells on Si(100). A growth technique which provides material with a low density of non-radiative centers and a uniform microstructure is necessary for observing such luminescence. The luminescence exhibits a characteristic no-phonon line due to the alloy randomnes, and a threefold splitting of the transverse optical phonon mode due to different nearest neighbor interactions. The luminescence has been observed from 2 to 300 K, and can also be electrically pumped (electroluminescence) to over 300 K, with peak emission from 1.3 to 1.5 μm.

Original languageEnglish (US)
Pages (from-to)307-311
Number of pages5
JournalMaterials Science and Engineering B
Volume21
Issue number2-3
DOIs
StatePublished - Nov 20 1993

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Sturm, J. C., Xiao, X., Mi, Q., Liu, C. W., Amour, A. S., Matutinovic-Krstelj, Z., Lenchyshyn, L. C., & Thewalt, M. L. W. (1993). Photoluminescence and electroluminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition. Materials Science and Engineering B, 21(2-3), 307-311. https://doi.org/10.1016/0921-5107(93)90374-V