Well-resolved band-edge exciton photoluminescence has been observed in strained Si1-xGex quantum wells on Si(100). A growth technique which provides material with a low density of non-radiative centers and a uniform microstructure is necessary for observing such luminescence. The luminescence exhibits a characteristic no-phonon line due to the alloy randomnes, and a threefold splitting of the transverse optical phonon mode due to different nearest neighbor interactions. The luminescence has been observed from 2 to 300 K, and can also be electrically pumped (electroluminescence) to over 300 K, with peak emission from 1.3 to 1.5 μm.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering