Photoluminescence and Diffusivity of Free Excitons in Doped Silicon

Y. H. Chen; S. A. Lyon

doi:10.1109/3.27999

Photoluminescence and Diffusivity of Free Excitons in Doped Silicon

Y. H. Chen, S. A. Lyon

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The diffusivity of free excitons (FE) in an inhomogeneously doped Si sample is evaluated by spatially resolved photoluminescence. The FE lifetimes and diffusion lengths are directly measured between 12 and 23 K. The FE diffusivity is found to be ~ 11 cm2/s at 12 K and increases with temperature. Exciton diffusion in doped silicon is found to be governed by their capture and release from neutral impurities. Implications of these measurements for the use of low-temperature photoluminescence as a method of spatially profiling dopant distributions are discussed.

Original language	English (US)
Pages (from-to)	1053-1055
Number of pages	3
Journal	IEEE Journal of Quantum Electronics
Volume	25
Issue number	5
DOIs	https://doi.org/10.1109/3.27999
State	Published - May 1989

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.27999

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title = "Photoluminescence and Diffusivity of Free Excitons in Doped Silicon",

abstract = "The diffusivity of free excitons (FE) in an inhomogeneously doped Si sample is evaluated by spatially resolved photoluminescence. The FE lifetimes and diffusion lengths are directly measured between 12 and 23 K. The FE diffusivity is found to be ~ 11 cm2/s at 12 K and increases with temperature. Exciton diffusion in doped silicon is found to be governed by their capture and release from neutral impurities. Implications of these measurements for the use of low-temperature photoluminescence as a method of spatially profiling dopant distributions are discussed.",

author = "Chen, {Y. H.} and Lyon, {S. A.}",

note = "Funding Information: Manuscript received September 20, 1988; revised January 17. 1989. This work was supported by the National Science Foundation under Grant ENG-79-08420. Y. H. Chen was with Princeton University, Princeton, NJ 08544. He is now with the Hewlett-Packard Corporation, Ft. Collins, CO. S. A. Lyon is with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. IEEE Log Number 8927103.",

year = "1989",

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doi = "10.1109/3.27999",

language = "English (US)",

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TY - JOUR

T1 - Photoluminescence and Diffusivity of Free Excitons in Doped Silicon

AU - Chen, Y. H.

AU - Lyon, S. A.

N1 - Funding Information: Manuscript received September 20, 1988; revised January 17. 1989. This work was supported by the National Science Foundation under Grant ENG-79-08420. Y. H. Chen was with Princeton University, Princeton, NJ 08544. He is now with the Hewlett-Packard Corporation, Ft. Collins, CO. S. A. Lyon is with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. IEEE Log Number 8927103.

PY - 1989/5

Y1 - 1989/5

N2 - The diffusivity of free excitons (FE) in an inhomogeneously doped Si sample is evaluated by spatially resolved photoluminescence. The FE lifetimes and diffusion lengths are directly measured between 12 and 23 K. The FE diffusivity is found to be ~ 11 cm2/s at 12 K and increases with temperature. Exciton diffusion in doped silicon is found to be governed by their capture and release from neutral impurities. Implications of these measurements for the use of low-temperature photoluminescence as a method of spatially profiling dopant distributions are discussed.

AB - The diffusivity of free excitons (FE) in an inhomogeneously doped Si sample is evaluated by spatially resolved photoluminescence. The FE lifetimes and diffusion lengths are directly measured between 12 and 23 K. The FE diffusivity is found to be ~ 11 cm2/s at 12 K and increases with temperature. Exciton diffusion in doped silicon is found to be governed by their capture and release from neutral impurities. Implications of these measurements for the use of low-temperature photoluminescence as a method of spatially profiling dopant distributions are discussed.

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JF - IEEE Journal of Quantum Electronics

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ER -

Photoluminescence and Diffusivity of Free Excitons in Doped Silicon

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