Photoinduced anomalous hall effect in 2-dimensional hole gases

D. A. Vasyukov, A. S. Plaut, A. H. MacDonald, M. Henini, L. N. Pfeiffer, K. W. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The anomalous Hall effect has been measured in symmetric and asymmetric p-type GaAs two-dimensional hole gases whilst illuminating them with circularly polarized light. The resulting photoinduced voltage was found to depend on the helicity of the light and in the case of the symmetric well on the magnitude of the current passing through the sample. This voltage increased with applied perpendicular magnetic field and its spectral dependence measured at various magnetic fields, demonstrated a series of maxima and minima, which when plotted against magnetic formed a Landau - level - like fan diagram.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages449-450
Number of pages2
DOIs
StatePublished - 2009
Externally publishedYes
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: Jul 27 2008Aug 1 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference29th International Conference on Physics of Semiconductors, ICPS 29
Country/TerritoryBrazil
CityRio de Janeiro
Period7/27/088/1/08

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Keywords

  • Anomalous hall effect
  • Circular photogalvanic effect
  • Landau levels

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