Abstract
We report a study of the infrared, photoinduced absorption in GaAs/AlAs and GaAs/Al0.33Ga0.67As multiple quantum well structures. The two observed lines are due to the (e1 : hh1)-(e2 : hh1) intrinsic excitons and a transition of excitons bound to imperfections. The exciton transition energy, polarization, intensity and its dependence on the excitation intensity are discussed.
Original language | English (US) |
---|---|
Pages (from-to) | 186-188 |
Number of pages | 3 |
Journal | Journal of Luminescence |
Volume | 45 |
Issue number | 1-6 |
DOIs | |
State | Published - 1990 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Biophysics
- Atomic and Molecular Physics, and Optics
- General Chemistry
- Biochemistry
- Condensed Matter Physics