Abstract
The formation of interfaces between magnesium (Mg) and the organic molecular semiconductor tris(8-hydroxy-quinoline) aluminum (Alq3) is studied via ultraviolet photoemission spectroscopy. The morphology and electronic structure of Mg-on-Alq3 and Alq3-on-Mg interfaces are compared. The energy of the Alq3 molecular levels is determined in both cases with respect to a reference Fermi level as a function of interface formation. The difference in injection characteristics between the two interfaces is examined in terms of differences in interface morphology and of electronic gap states induced by the diffusion of Mg at the Mg/Alq3 interface.
Original language | English (US) |
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Pages (from-to) | 355-358 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 84 |
Issue number | 1 |
DOIs | |
State | Published - Jul 1 1998 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy