Phosphorus doping and sharp profiles in silicon and silicon-germanium epitaxy by rapid thermal chemical vapor deposition

Min Yang, Malcolm Carroll, James Christopher Sturm, Temel Büyüklimanli

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

In situ phosphorus doping of silicon epitaxy from 700 to 1000 °C by low pressure rapid thermal chemical vapor deposition in a cold wall system, using dichlorosilane as the silicon source, has been investigated. At a high phosphine flow rate, the growth rate of silicon decreases dramatically (by approximately 60%) and the phosphorus incorporation level saturates. A significant persistence effect of phosphorus after turning off phosphine is observed. However, a sharper transition and higher doping level are observed in Si1-xGex layers grown at 625 °C. Improvement of the phosphorus profile in silicon to approximately 13 nm/decade is demonstrated by reactor cleaning and ex situ etching of the wafer surface during a growth interruption after phosphorus-doped epitaxy. Despite the growth interruption, an in situ 800 °C bake at 10 Torr in hydrogen before regrowth can give an oxygen- and carbon-free interface without excessive dopant diffusion.

Original languageEnglish (US)
Pages (from-to)3541-3545
Number of pages5
JournalJournal of the Electrochemical Society
Volume147
Issue number9
DOIs
StatePublished - Sep 1 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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